公开(公告)号：US20030145453A1

公开(公告)日：2003-08-07

申请号：US10281826

申请日：2002-10-28

Applicant: FUJITSU LIMITED

Inventor： Chikayoshi Kamata ,  Shin Eguchi ,  Atsushi Tanaka ,  Tooru Fukuya

IPC: G11B005/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F41/308 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: The lower electrode is at least exposed at the surface of a substructure layer in a current-perpendicular-to-the-plane structure magnetoresistive element. A resist is formed to extend over the surface of the substructure layer. A patterning void is defined in the resist. The shape of the patterning void is designed to correspond to the contour of the magnetoresistive multilayered film. The magnetoresistive multilayered film is formed by deposition within the patterning void. This method enables avoidance of a dry etching process effected on the magnetoresistive multilayered film. Scrapings or waste of the magnetoresistive multilayered film are not generated at all. The side surfaces of the magnetoresistive multilayered film are completely prevented from attachment or adhesion of scrapings or waste. The side surfaces of the magnetoresistive multilayered film are kept stainless.

Abstract translation: 下电极至少暴露在电流垂直于平面结构的磁阻元件中的子结构层的表面处。 形成抗蚀剂以延伸到子结构层的表面上。 在抗蚀剂中定义图案化空隙。 图形化空穴的形状被设计成对应于磁阻多层膜的轮廓。 磁阻多层膜通过在图案化空隙内沉积而形成。 该方法能够避免对磁阻多层膜产生的干蚀刻工艺。 完全不产生磁阻多层膜的刮除或废弃。 完全防止磁阻多层膜的侧表面附着​​或粘附刮屑或废料。 磁阻多层膜的侧表面保持不锈钢。