公开(公告)号：US09917092B2

公开(公告)日：2018-03-13

申请号：US14980071

申请日：2015-12-28

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Youichi Okita ,  Hideki Ito ,  Wensheng Wang

IPC分类号： H01L27/115 ,  H01L49/02 ,  H01L27/11507

CPC分类号： H01L27/11507 ,  H01L28/56 ,  H01L28/57

摘要： A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.

公开(公告)号：US10269813B2

公开(公告)日：2019-04-23

申请号：US15886411

申请日：2018-02-01

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Youichi Okita ,  Hideki Ito ,  Wensheng Wang

IPC分类号： H01L27/11507 ,  H01L49/02

摘要： A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.

公开(公告)号：US20160211269A1

公开(公告)日：2016-07-21

申请号：US14980071

申请日：2015-12-28

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Youichi Okita ,  Hideki Ito ,  Wensheng Wang

IPC分类号： H01L27/115

CPC分类号： H01L27/11507 ,  H01L28/56 ,  H01L28/57

摘要： A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.

摘要翻译： 一种制造半导体器件的方法包括：在半导体衬底上形成绝缘膜; 在绝缘膜上形成导电膜; 在导电膜上形成电介质膜; 在电介质膜上间隔地形成多个上电极; 通过溅射法在上电极和电介质膜上形成第一保护绝缘膜; 通过原子层沉积法在第一保护绝缘膜上形成第二保护绝缘膜，由此用第二保护绝缘膜填充电介质膜的晶界的间隙; 以及在形成第二保护绝缘膜之后对导电膜进行图案化以提供下电极。