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公开(公告)号：US20200251551A1
公开(公告)日：2020-08-06
申请号：US16733542
申请日：2020-01-03
发明人： Youichi Okita , Wensheng Wang , Kazuaki Takai
IPC分类号： H01L49/02 , H01L27/1159 , H01L27/11507 , H01L29/66 , H01L29/78
摘要： A first-layer insulating film having a barrier property against a determined element contained in a ferroelectric capacitor as well as an oxygen permeability, a hydrogen permeability, and a water permeability is formed over a surface of the ferroelectric capacitor formed over a substrate. After that, heat treatment is performed in an oxidizing atmosphere. After the heat treatment, a second insulating film having a hydrogen permeability and a water permeability lower than those of the first-layer insulating film respectively is formed over a surface of the first-layer insulating film in a non-reducing atmosphere. A third-layer insulating film is formed over a surface of the second-layer insulating film. By doing so, degradation of a ferroelectric film under and after the formation of a semiconductor device having the ferroelectric capacitor is suppressed and deterioration in the characteristics of the ferroelectric capacitor is suppressed.
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公开(公告)号：US09917092B2
公开(公告)日：2018-03-13
申请号：US14980071
申请日：2015-12-28
发明人： Youichi Okita , Hideki Ito , Wensheng Wang
IPC分类号： H01L27/115 , H01L49/02 , H01L27/11507
CPC分类号： H01L27/11507 , H01L28/56 , H01L28/57
摘要： A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.
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公开(公告)号：US20160211269A1
公开(公告)日：2016-07-21
申请号：US14980071
申请日：2015-12-28
发明人： Youichi Okita , Hideki Ito , Wensheng Wang
IPC分类号： H01L27/115
CPC分类号： H01L27/11507 , H01L28/56 , H01L28/57
摘要： A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.
摘要翻译： 一种制造半导体器件的方法包括：在半导体衬底上形成绝缘膜; 在绝缘膜上形成导电膜; 在导电膜上形成电介质膜; 在电介质膜上间隔地形成多个上电极; 通过溅射法在上电极和电介质膜上形成第一保护绝缘膜; 通过原子层沉积法在第一保护绝缘膜上形成第二保护绝缘膜，由此用第二保护绝缘膜填充电介质膜的晶界的间隙; 以及在形成第二保护绝缘膜之后对导电膜进行图案化以提供下电极。
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公开(公告)号：US11164936B2
公开(公告)日：2021-11-02
申请号：US16733542
申请日：2020-01-03
发明人： Youichi Okita , Wensheng Wang , Kazuaki Takai
IPC分类号： H01L29/78 , H01L29/66 , H01L27/11507 , H01L49/02 , H01L27/1159
摘要： A first-layer insulating film having a barrier property against a determined element contained in a ferroelectric capacitor as well as an oxygen permeability, a hydrogen permeability, and a water permeability is formed over a surface of the ferroelectric capacitor formed over a substrate. After that, heat treatment is performed in an oxidizing atmosphere. After the heat treatment, a second insulating film having a hydrogen permeability and a water permeability lower than those of the first-layer insulating film respectively is formed over a surface of the first-layer insulating film in a non-reducing atmosphere. A third-layer insulating film is formed over a surface of the second-layer insulating film. By doing so, degradation of a ferroelectric film under and after the formation of a semiconductor device having the ferroelectric capacitor is suppressed and deterioration in the characteristics of the ferroelectric capacitor is suppressed.
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公开(公告)号：US10269813B2
公开(公告)日：2019-04-23
申请号：US15886411
申请日：2018-02-01
发明人： Youichi Okita , Hideki Ito , Wensheng Wang
IPC分类号： H01L27/11507 , H01L49/02
摘要： A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.
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