REDUCTION OF SURFACE RECOMBINATION LOSSES IN MICRO-LEDS

    公开(公告)号:US20190305188A1

    公开(公告)日:2019-10-03

    申请号:US16369059

    申请日:2019-03-29

    Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, an LED includes a semiconductor layer including an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter that is less than two times an electron diffusion length of a material of the semiconductor layer. The LED also includes a passivation layer that is formed on an outer surface of the semiconductor layer opposite to the light outcoupling surface. The passivation layer includes a dielectric material, and the passivation layer is in direct contact with a portion of the active light emitting layer.

    HIGH-EFFICIENCY MICRO-LEDS
    3.
    发明申请

    公开(公告)号:US20190305183A1

    公开(公告)日:2019-10-03

    申请号:US15969523

    申请日:2018-05-02

    Inventor: Stephan Lutgen

    Abstract: Disclosed herein are light emitting diodes (LEDs) having a high efficiency. A light emitting diode including an active light emitting layer within a semiconductor layer is provided. The semiconductor layer has a mesa shape. The light emitting diode also includes a substrate having a first surface on which the semiconductor layer is positioned and an outcoupling surface opposite to the first surface. Light generated by the active light emitting layer is incident on the outcoupling surface and propagates toward an optical element downstream of the outcoupling surface. The light emitting diode also includes a first anti-reflection coating adjacent to the outcoupling surface; an index-matched material between the outcoupling surface and the optical element, wherein an index of refraction of the index-matched material is greater than or equal to an index of refraction of the optical element; and/or secondary optics adjacent to the outcoupling surface.

    REDUCTION OF SURFACE RECOMBINATION LOSSES IN MICRO-LEDS

    公开(公告)号:US20190305181A1

    公开(公告)日:2019-10-03

    申请号:US16369069

    申请日:2019-03-29

    Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes reducing a lateral carrier diffusion in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. An outcoupling surface of the semiconductor layer has a diameter of less than 10 μm. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

    MICRON-SIZED LIGHT EMITTING DIODE DESIGNS

    公开(公告)号:US20220238755A1

    公开(公告)日:2022-07-28

    申请号:US17681192

    申请日:2022-02-25

    Abstract: A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

    High-efficiency micro-LEDs
    7.
    发明授权

    公开(公告)号:US10468552B2

    公开(公告)日:2019-11-05

    申请号:US15969523

    申请日:2018-05-02

    Inventor: Stephan Lutgen

    Abstract: Disclosed herein are light emitting diodes (LEDs) having a high efficiency. A light emitting diode including an active light emitting layer within a semiconductor layer is provided. The semiconductor layer has a mesa shape. The light emitting diode also includes a substrate having a first surface on which the semiconductor layer is positioned and an outcoupling surface opposite to the first surface. Light generated by the active light emitting layer is incident on the outcoupling surface and propagates toward an optical element downstream of the outcoupling surface. The light emitting diode also includes a first anti-reflection coating adjacent to the outcoupling surface; an index-matched material between the outcoupling surface and the optical element, wherein an index of refraction of the index-matched material is greater than or equal to an index of refraction of the optical element; and/or secondary optics adjacent to the outcoupling surface.

    Reduction of surface recombination losses in micro-LEDs

    公开(公告)号:US11018280B2

    公开(公告)日:2021-05-25

    申请号:US16800875

    申请日:2020-02-25

    Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 μm. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Patent Agency Ranking