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    Molded etch masks
    2.
    发明授权
    Molded etch masks 有权

    公开(公告)号：US10910514B1

    公开(公告)日：2021-02-02

    申请号：US16229966

    申请日：2018-12-21

    Applicant: Facebook Technologies, LLC

    Inventor： Daniel Brodoceanu ,  David Massoubre ,  Karsten Moh

    IPC: H01L33/24 ,  H01L33/58 ,  H01L33/32 ,  H01L27/15 ,  H01S5/12 ,  H01S5/22 ,  H01L33/00 ,  H01L33/20 ,  G03F7/00 ,  H01L21/027

    Abstract: Techniques related to molded etch masks are disclosed. Etch masks can be formed based on pressing a mold against a layer of pliable masking material applied to a surface of an epitaxial layered structure. The epitaxial layered structure includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first and second semiconductor layers. The epitaxial layered structure is etched using the molded etch masks to form etched structures. The etched structures may be optical structures that modify light emitted through the surface or epitaxial mesas that collimate light within the epitaxial layered structure.

    Laser lift-off masks
    3.
    发明授权
    Laser lift-off masks 有权

    公开(公告)号：US10811575B2

    公开(公告)日：2020-10-20

    申请号：US16049783

    申请日：2018-07-30

    Applicant: Facebook Technologies, LLC

    Inventor： Daniel Brodoceanu ,  David Massoubre ,  James Small ,  Oscar Torrents Abad ,  Patrick Joseph Hughes

    IPC: H01L21/00 ,  H01L33/56 ,  H01L21/56

    Abstract: Techniques related to laser lift-off masks are disclosed. In some embodiments, masking material is applied to a substrate that is attached to a plurality of semiconductor device sets. More specifically, the masking material is applied to one or more regions of the substrate between the semiconductor device sets. When the semiconductor device sets are embedded in a filling material, the masking material may be situated between the substrate and the filling material. Thus, transmitting light through the substrate toward the semiconductor device sets causes the substrate to become detached from the semiconductor device sets. However, the light is at least partially occluded by the masking material.

    Wafer bonding for laser lift-off
    4.
    发明授权
    Wafer bonding for laser lift-off 有权

    公开(公告)号：US10790408B1

    公开(公告)日：2020-09-29

    申请号：US16362535

    申请日：2019-03-22

    Applicant: Facebook Technologies, LLC

    Inventor： David Massoubre

    IPC: H01L33/06 ,  H01L33/10 ,  H01L33/00 ,  H01L33/40 ,  H01L33/24 ,  H01L25/075 ,  H01L33/30 ,  H01L33/32

    Abstract: A micro-light emitting diode (LED) is manufactured using a lift-off substrate that is removed using a laser-lift-off process. A method for manufacturing the LED may include forming an epitaxial structure of the LED on a growth substrate, and attaching an open side of the epitaxial structure with a gallium-based layer and a lift-off substrate, the gallium-based layer between the epitaxial structure and the lift-off substrate. The growth substrate is separated from the epitaxial structure, and the epitaxial structure may be processed into the LED. Light is applied to the gallium-based layer through the lift-off substrate to debond the second portion of the gallium-based layer and the lift-off substrate. The lift-off substrate is separated from the second portion of the gallium-based layer to expose a light emitting surface of the LED on the second portion of the gallium-based layer.

    MICRON-SIZED LIGHT EMITTING DIODE DESIGNS
    7.
    发明申请
    MICRON-SIZED LIGHT EMITTING DIODE DESIGNS 有权

    公开(公告)号：US20220238755A1

    公开(公告)日：2022-07-28

    申请号：US17681192

    申请日：2022-02-25

    Applicant: Facebook Technologies, LLC

    Inventor： Stephan Lutgen ,  David Massoubre

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/16 ,  H01L33/10 ,  H01L33/60 ,  H01L33/20 ,  H01L33/28 ,  H01L33/46

    Abstract: A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

    Self-alignment process for micro light emitting diode using back-side exposure
    9.
    发明授权
    Self-alignment process for micro light emitting diode using back-side exposure 有权

    公开(公告)号：US10741717B1

    公开(公告)日：2020-08-11

    申请号：US16356850

    申请日：2019-03-18

    Applicant: Facebook Technologies, LLC

    Inventor： Celine Claire Oyer ,  David Massoubre ,  Tilman Zehender

    IPC: H01L33/00 ,  H01L33/40 ,  H01L33/44 ,  H01L33/32

    Abstract: Embodiments relate to a micro light-emitting-diode (μLED) fabricated using a self-aligned process. To fabricate the μLED, a metal layer is deposited on a p-type semiconductor. The p-type semiconductor is on an n-type semiconductor and the n-type semiconductor is on a top side of a substrate. The metal layer is patterned to define a p-metal. The p-type semiconductor is etched using the p-metal as an etch mask. Similarly, the n-type semiconductor is etched using the p-metal and the p-type semiconductor as an etch mask. A negative photoresist layer is deposited over the patterned p-metal and the p-type semiconductor. The negative photoresist is then exposed from the back side of the substrate, thus exposing the regions of the negative photoresist that are not masked by the p-metal. The negative photoresist is then developed to expose the p-metal.

    Assembly of semiconductor devices
    10.
    发明授权
    Assembly of semiconductor devices 有权

    公开(公告)号：US10600823B2

    公开(公告)日：2020-03-24

    申请号：US15918985

    申请日：2018-03-12

    Applicant: Facebook Technologies, LLC

    Inventor： Padraig Hughes ,  Joseph O'Keeffe ,  Celine Oyer ,  William Henry ,  David Massoubre ,  Pooya Saketi

    IPC: H01L27/12 ,  H01L27/15 ,  H01L25/075

    Abstract: A method for manufacturing a display element comprising a plurality of pixels, each comprising a plurality of subpixels. The method comprises undertaking, using a pick up tool, a first placement cycle (1908) comprising picking up a plurality of first, untested LED dies and placing them on a display substrate at locations corresponding to the plurality of pixels, testing (1912) the first LED emitters on the display substrate to determine one or more locations of non-functional first LED emitters, selecting one or more second tested LED dies based on a result of the test, configuring the selected one or more second LED dies to enable their pick up and placement on the display substrate and undertaking, using the PUT, a second placement cycle (2008) comprising picking up the selected one or more second LED dies and placing them on the display substrate at the determined locations of the nonfunctional first LED emitters.

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