公开(公告)号：US20140103428A1

公开(公告)日：2014-04-17

申请号：US14141340

申请日：2013-12-26

申请人： Fairchild Semiconductor Corporation

发明人： Suku Kim

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7802

摘要： Methods for fabricating MOSFET devices with superjunction having high breakdown voltages (>600 volts) with competitively low specific resistance include growing an epitaxial layer of a second conductivity type on a substrate of a first conductivity type, forming a trench in the epitaxial layer, and growing a second epitaxial layer along the sidewalls and bottom of the trench. The second epitaxial layer is doped with a dopant of first conductivity type. MOSFET devices with superjunction having high breakdown voltages include a first epitaxial layer of a second conductivity type disposed over a substrate of a first conductivity type and a trench formed in the epitaxial layer. The trench includes a second epitaxial layer grown along the sidewalls and bottom of the trench.

摘要翻译： 用于制造具有高击穿电压（> 600伏特）的具有竞争力低电阻率的MOSFET的MOSFET器件的方法包括在第一导电类型的衬底上生长第二导电类型的外延层，在外延层中形成沟槽，并且生长 沿沟槽的侧壁和底部的第二外延层。 第二外延层掺杂有第一导电类型的掺杂剂。 具有高击穿电压的MOSFET的MOSFET器件包括设置在第一导电类型的衬底上的第二导电类型的第一外延层和形成在外延层中的沟槽。 沟槽包括沿沟槽的侧壁和底部生长的第二外延层。