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公开(公告)号：US11018577B2
公开(公告)日：2021-05-25
申请号：US16571680
申请日：2019-09-16
发明人： Lei Huang
摘要： A charge pump circuit generates a charge pump voltage that powers a bias circuit. The bias circuit generates a reference current and generates switch currents from the reference current. Gate-source voltages are generated from the switch currents and applied to switching components of switch circuits to connect two nodes. The gate-source voltages can be generated in the bias circuit and provided to the switch circuits. The gate-source voltages can also be generated in the switch circuits.
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2.发明授权公开(公告)号：US10818582B2
公开(公告)日：2020-10-27
申请号：US16680649
申请日：2019-11-12
IPC分类号： H01L23/49 , H01L23/495 , H01L23/492 , H01L21/56 , H01L21/48 , H01L23/31
摘要： In a general aspect, a method for producing a packaged semiconductor device can include coupling a semiconductor device to a leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The method can also include forming, with a laser, a groove in the signal lead, the groove having a first sidewall and a second sidewall, and applying solder plating to the signal lead, including the first sidewall and the second sidewall of the groove. The method can further include separating, at the groove, the signal lead into a first portion and a second portion, such that the second portion of the signal lead is separated from the metal leadframe structure.
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公开(公告)号：US10749027B2
公开(公告)日：2020-08-18
申请号：US16234844
申请日：2018-12-28
发明人： Joseph A. Yedinak , Richard Stokes , Jason Higgs , Fred Session
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40 , H01L29/423 , H01L21/02 , H01L29/739
摘要： In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.
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公开(公告)号：US10514430B2
公开(公告)日：2019-12-24
申请号：US15727711
申请日：2017-10-09
发明人： Phil Mather
IPC分类号： G01R33/09
摘要： In one general aspect, a system includes a material including a surface, and a magnetic sensor configured to sense a first component and a second component of a magnetic field. The first component of the magnetic field may be orthogonal to the second component of the magnetic field. The magnetic sensor may include a first sense element included on a first angled surface sloping in a first direction relative to the surface of the material, a second sense element included on a second angled surface sloping in the first direction, and a third angled surface sloping in a second direction different from the first direction where the third angled surface can be disposed between the first angled surface and the second angled surface and can exclude a sense element.
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公开(公告)号：US10389337B2
公开(公告)日：2019-08-20
申请号：US15584729
申请日：2017-05-02
发明人： Hua Zhu , Kaiwei Yao
摘要： A ramp generator includes a current generator, a current mirror, and a first capacitor. The current generator has an input for receiving a clock signal, and an output for providing a current proportional to a frequency of the clock signal using a first transistor having first and second current electrodes and a control electrode, an amplifier that establishes a reference voltage on the second current electrode of the first transistor, and a variable resistor coupled between the second current electrode of the second transistor and ground whose resistance is set according to the frequency of the clock signal. The current mirror has an input coupled to the first terminal of the first transistor, and a second terminal. The first capacitor has a first terminal coupled to the output of the current mirror and providing a ramp signal, and a second terminal coupled to the first power supply voltage terminal.
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公开(公告)号：US20190245078A1
公开(公告)日：2019-08-08
申请号：US16234844
申请日：2018-12-28
发明人： Joseph A. Yedinak , Richard Stokes , Jason Higgs , Fred Session
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40 , H01L21/02 , H01L29/739 , H01L29/423
摘要： In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.
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公开(公告)号：US10333260B2
公开(公告)日：2019-06-25
申请号：US15678713
申请日：2017-08-16
发明人： Robert A. Card
IPC分类号： G06F13/10 , H01R13/66 , H01R12/72 , H01R12/70 , G06F13/42 , G06F13/38 , G06F1/26 , G06F1/3206 , H01R24/60 , H01R107/00
摘要： A device includes an interface configured to couple a power source to the device. The interface includes a plurality of contacts including at least one first contact configured to couple a voltage bus of the power source to a voltage bus of the device, and at least one second contact configured to couple the voltage bus of the power source to a secondary bus of the device. The device further includes a detector configured to determine a contact resistance of the at least one first contact based on a first current associated with the voltage bus and a second current associated with the secondary bus.
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公开(公告)号：US20190181765A1
公开(公告)日：2019-06-13
申请号：US16280241
申请日：2019-02-20
发明人： Zhibo TAO , Jung-Sheng CHEN , Li LIN , Kai-Fang WEI , Chih-HSIEN HSIEH , Hangseok CHOI , Yue-Hong TANG
IPC分类号： H02M3/335
摘要： A switched-mode power supply with near valley switching includes a quasi-resonant converter. The converter includes a switch element that is turned on not only at the valley, but also in a window range of ΔtNVW close to the valley, where the voltage across the switch element is at its minimum. This advantageously reduces switching loss and maintains a balance between efficiency and frequency variation.
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公开(公告)号：US10270438B2
公开(公告)日：2019-04-23
申请号：US14793382
申请日：2015-07-07
发明人： Lei Huang , Na Meng , Kenneth P. Snowdon
IPC分类号： H02H3/20 , H02H9/04 , H03K17/687
摘要： A switch device includes a common node that is connected to end nodes, such as that of computer interface ports. The switch device includes several switch circuits that can be connected in series to form a switch path between the common node and an end node. A switch circuit can include a main switch, such as a transistor that can be configured to withstand a positive or negative voltage surge by automatically changing the connection of its bulk.
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公开(公告)号：US10256735B2
公开(公告)日：2019-04-09
申请号：US15053263
申请日：2016-02-25
发明人： Zhibo Tao , Jung-Sheng Chen , Li Lin , Kai-Fang Wei , Chih-Hsien Hsieh , Hangseok Choi , Yue-Hong Tang
摘要： A switched-mode power supply with near valley switching includes a quasi-resonant converter. The converter includes a switch element that is turned on not only at the valley, but also in a window range of ΔtNVW close to the valley, where the voltage across the switch element is at its minimum. This advantageously reduces switching loss and maintains a balance between efficiency and frequency variation.
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