摘要:
A photodiode, a light sensor and a fabricating method thereof are disclosed. An n-type semiconductor layer and an intrinsic semiconductor layer of the photodiode respectively comprise n-type amorphous indium gallium zinc oxide (IGZO) and intrinsic IGZO. The oxygen content of the intrinsic amorphous IGZO is greater than the oxygen content of the n-type amorphous IGZO. A light sensor comprise the photodiode is also disclosed.
摘要:
A manufacturing method for a flexible display apparatus is provided. A rigid substrate is provided. A flexible substrate having a supporting portion and a cutting portion surrounding the supporting portion is provided. A first adhesive material is formed between the rigid substrate and the cutting portion of the flexible substrate, so that the flexible substrate is adhered onto the rigid substrate by the first adhesive material. The first adhesive material does not locate on the supporting portion of the flexible substrate. At least a display unit is formed on the supporting portion of the flexible substrate. The supporting portion and the cutting portion of the flexible substrate are separated so as to separate the rigid substrate and the flexible substrate, wherein the flexible substrate and the display unit thereon form a flexible display apparatus. In the method, the flexible substrate and the rigid substrate can be easily separated.
摘要:
A color filter suitable for being disposed on a substrate is provided. The color filter includes a plurality of pixel units separately disposed on the substrate so as to define a plurality of blank regions thereon. A color display apparatus applying the color filter is also provided, wherein the color display apparatus includes a driving circuit substrate, the color filter and a display medium layer. The color filter is disposed on the driving circuit substrate. The display medium layer is disposed between the driving circuit substrate and the color filter.
摘要:
A color electronic paper apparatus includes a display layer, a color resist layer, an anti-ultraviolet layer and a protective sheet. The color resist layer is disposed on the display layer. The anti-ultraviolet layer is disposed on the color resist layer. The protective sheet is disposed on the anti-ultraviolet layer. A manufacturing method of the color electronic paper apparatus and a color electronic paper display are provided herein.
摘要:
A display apparatus includes a driving substrate and an organic light emitting diode device. The driving substrate includes a display area, a non-display area, a substrate and a transparent driving element. The transparent driving element is disposed in the non-display area to form a transparent region. The organic light emitting diode device is disposed over the driving substrate and located in the display area to form a non-transparent region.
摘要:
A flexible electronic paper display apparatus includes a drive substrate and a display layer. The display layer is disposed on the drive substrate. The drive substrate includes a plastic substrate, a stainless steel layer, an insulation layer and a circuit unit. The stainless steel layer is disposed on the plastic substrate, the insulation layer is disposed on the stainless steel layer, and the circuit unit is disposed on the insulation layer. Production yield of the flexible electronic paper display apparatus can be increased. Additionally, a manufacturing method for the flexible electronic paper display apparatus is also provided.
摘要:
A transfer print structure is provided. The transfer print structure comprises a substrate; a color ink layer including a functional region; and an adhesive device combining the functional region with the substrate.
摘要:
Disclosed herein is a thin film transistor array substrate. The thin film transistor array substrate includes a display area and a non-display area. The non-display area includes a signal line, a connecting line and a metal contact. The connecting line is formed in a first patterned metal layer. The signal line and the metal contact are formed in a second patterned metal layer. The connecting line is connected to the signal line by a first through-hole, and the connecting line is connected to the metal contact by a second through-hole. Furthermore, a method of fabricating the thin film transistor array substrate is also disclosed.
摘要:
Disclosed herein is a method for manufacturing an active array substrate. The method includes the steps of: forming a first patterned metal layer on a substrate; sequentially forming a semiconductor layer, an insulating layer and a second metal layer to cover the first patterned metal layer; forming a patterned photoresist layer on the second metal layer; patterning the second metal layer, the insulating layer and the semiconductor layer to form a second patterned metal layer, a patterned insulating layer and a patterned semiconductor layer, and removing a portion of the patterned photoresist layer; heating the remained portion of the patterned photoresist layer such that the remained portion is fluidized and transformed into a protective layer; and forming a pixel electrode.
摘要:
A method for manufacturing an active array substrate is provided herein. The active array substrate can be manufactured by using only two photolithography process steps. The photolithography process step using a first photomask may be provided for forming a drain electrode, a source electrode, a data line and/or a data line connecting pad and a patterned transparent conductive layer, etc. The photolithography process step using a second photomask may be utilized for forming a gate electrode, a gate line, a gate insulating layer, a channel layer and/or a gate line connecting pad, and so forth.