公开(公告)号：US4968582A

公开(公告)日：1990-11-06

申请号：US212440

申请日：1988-06-28

申请人： Farid M. Tranjan ,  Thomas D. DuBois ,  Rudolf G. Frieser ,  Stephen M. Bobbio ,  Susan K. S. Jones

发明人： Farid M. Tranjan ,  Thomas D. DuBois ,  Rudolf G. Frieser ,  Stephen M. Bobbio ,  Susan K. S. Jones

IPC分类号： G03F7/004 ,  G03F7/022 ,  G03F7/36 ,  H01L21/027

CPC分类号： G03F7/0226 ,  G03F7/004 ,  G03F7/36 ,  Y10S430/136

摘要： The invention is a modified organic photoresist which is resistant to etching in oxygen-containing plasmas and therefore particularly useful for masking and etching organic polymer materials in VLSI and advanced packaging applications. The invention comprises adding a phosphorous-containing compound to a conventional photoresist. The phosphorous-containing compound is of a type and in an amount effective to substantially prevent etching of the modified photoresist in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of the photoresist or the elasticity or the adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched.

公开(公告)号：US5114827A

公开(公告)日：1992-05-19

申请号：US585708

申请日：1990-09-20

申请人： Farid M. Tranjan ,  Thomas D. DuBois ,  Rudolf G. Frieser ,  Stephen M. Bobbio ,  Susan K. S. Jones

发明人： Farid M. Tranjan ,  Thomas D. DuBois ,  Rudolf G. Frieser ,  Stephen M. Bobbio ,  Susan K. S. Jones

IPC分类号： G03F7/004 ,  G03F7/022 ,  G03F7/36

CPC分类号： G03F7/004 ,  G03F7/0226 ,  G03F7/36

摘要： The invention is a modified organic photoresist which is resistant to etching in oxygen-containing plasmas and therefore particularly useful for masking and etching organic polymer materials in VLSI and advanced packaging applications. The invention comprises adding a phosphorous-containing compound to a conventional photoresist. The phosphorous-containing compound is of a type and in an amount effective to substantially prevent etching of the modified photoresist in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of the photoresist or the elasticity or the adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched.

摘要翻译： 本发明是一种改进的有机光致抗蚀剂，其耐氧蚀等离子体中的蚀刻性能，因此特别适用于在VLSI和高级封装应用中掩蔽和蚀刻有机聚合物材料。 本发明包括向常规光致抗蚀剂中加入含磷化合物。 含磷化合物的类型和数量有效地基本上防止在含氧等离子体中蚀刻改性光致抗蚀剂而基本上不利地影响光致抗蚀剂的光敏性或弹性或在其中形成的耐蚀刻膜的粘附性 含氧等离子体暴露于待图案化和蚀刻的下层材料。