公开(公告)号：US20190296174A1

公开(公告)日：2019-09-26

申请号：US16340984

申请日：2017-10-11

Applicant: First Solar, Inc.

Inventor： Markus Gloeckler ,  Fang Mei ,  Wei Zhang

IPC: H01L31/0725 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/073

Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium. The photovoltaic device may also include an electron reflector layer and/or an optical reflector layer.

公开(公告)号：US12206037B2

公开(公告)日：2025-01-21

申请号：US16340984

申请日：2017-10-11

Applicant: First Solar, Inc.

Inventor： Markus Gloeckler ,  Fang Mei ,  Wei Zhang

IPC: H01L31/044 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0725 ,  H01L31/073

Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium. The photovoltaic device may also include an electron reflector layer and/or an optical reflector layer.

公开(公告)号：US20250169199A1

公开(公告)日：2025-05-22

申请号：US19030859

申请日：2025-01-17

Applicant: First Solar, Inc.

Inventor： Markus Gloeckler ,  Fang Mei ,  Wei Zhang

IPC: H10F10/161 ,  H10F10/162 ,  H10F77/123 ,  H10F77/20

Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium.