公开(公告)号：US20100193002A1

公开(公告)日：2010-08-05

申请号：US12451192

申请日：2008-05-14

Applicant: Frank Dimroth ,  Jara Fernandez ,  Stefan Janz

Inventor： Frank Dimroth ,  Jara Fernandez ,  Stefan Janz

IPC: H01L35/00 ,  H01L29/16 ,  H01L21/302 ,  H01L31/18

CPC classification number: H01L31/078 ,  H01L21/02529 ,  H01L21/0262 ,  H01L31/1808 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: The invention relates to a semiconductor component which contains one semiconductor layer containing germanium. On the rear-side, i.e. on the side orientated away from the incident light, the semiconductor layer has at least one layer containing silicon carbide which serves, on the one hand, for the reflection of radiation and also as rear-side passivation or as diffusion barrier. A method for the production of semiconductor components of this type is likewise described. The semiconductor components according to the invention are used in particular as thermophotovoltaic cells or multiple solar cells based on germanium.

Abstract translation: 本发明涉及包含一个含有锗的半导体层的半导体部件。 在后侧，即在远离入射光的一侧上，半导体层具有至少一层含有碳化硅的层，一方面用于反射辐射，也用作背面钝化或如 扩散屏障。 同样描述了用于制造这种类型的半导体部件的方法。 根据本发明的半导体组件特别用作基于锗的热光伏电池或多个太阳能电池。

公开(公告)号：US20100206371A1

公开(公告)日：2010-08-19

申请号：US12598351

申请日：2008-05-14

Applicant: Stefan Janz ,  Stefan Reber

Inventor： Stefan Janz ,  Stefan Reber

IPC: H01L31/0232 ,  H01L21/20 ,  H01L31/0312

CPC classification number: H01L31/056 ,  H01L31/02327 ,  Y02E10/52

Abstract: The invention relates to a reflectively coated semiconductor component which has a semiconductor layer, a functional layer which substantially comprises silicon and carbon, and at least one further layer which substantially comprises silicon and carbon. This further layer functions as reflector for light incident upon the semiconductor component. The invention also relates to a method for the production of semiconductor components of this type. Semiconductor components are used in particular as solar cells or as components of sensors or optical filters.

Abstract translation: 本发明涉及一种反射涂覆的半导体元件，其具有半导体层，基本上包括硅和碳的功能层，以及至少一个基本上包含硅和碳的另外的层。 该另外的层用作入射到半导体部件上的光的反射器。 本发明还涉及一种用于生产这种类型的半导体部件的方法。 半导体元件特别用作太阳能电池或用作传感器或滤光器的组件。

公开(公告)号：US20110240109A1

公开(公告)日：2011-10-06

申请号：US13127414

申请日：2009-11-17

Applicant: Stefan Janz ,  Stefan Reber

Inventor： Stefan Janz ,  Stefan Reber

IPC: H01L31/06 ,  H01L31/18

CPC classification number: H01L21/0445 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/0262 ,  H01L29/1608 ,  H01L31/0725 ,  H01L31/1816 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

Abstract: The invention describes photovoltaic tandem solar cells made of crystalline silicon and crystalline silicon carbide having an Si/C intermediate layer. Furthermore, the invention describes a method for the production of tandem solar cells.

Abstract translation: 本发明描述了由晶体硅制成的光伏串联太阳能电池和具有Si / C中间层的结晶碳化硅。 此外，本发明描述了一种生产串联太阳能电池的方法。