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公开(公告)号：US20080268584A1
公开(公告)日：2008-10-30
申请号：US12116271
申请日：2008-05-07
申请人： Frank E. Anderson , Robert W. Cornell , Yimin Guan
发明人： Frank E. Anderson , Robert W. Cornell , Yimin Guan
IPC分类号： H01L21/336
CPC分类号： H01L29/78603 , H01L27/1292 , H01L29/66757 , H01L29/74
摘要： Methods for forming electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the method may include applying materials to a flexible substrate to form the electronic device. At least some of the materials applied to the flexible substrate may be applied using a printing apparatus. The substrate may be annealed when at least some of the materials are present on the flexible substrate. The resulting electronic device may have a high charge carrier mobility in the range from about 10 cm2/V-s to about 100 cm2/V-s.
摘要翻译： 用于形成诸如在柔性基底上具有柔性基底和印刷材料的电子器件的方法。 在一个实施例中，该方法可以包括将材料应用于柔性基板以形成电子设备。 施加到柔性基板上的至少一些材料可以使用印刷装置来施加。 当至少一些材料存在于柔性基底上时，基底可以退火。 所得到的电子器件可以具有在约10cm 2 / V-s至约100cm 2 / V-s范围内的高电荷载流子迁移率。
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公开(公告)号：US08366952B2
公开(公告)日：2013-02-05
申请号：US12758161
申请日：2010-04-12
CPC分类号： B41J2/1603 , B41J2/14129 , B41J2/1628 , B41J2/164 , Y10T29/49401
摘要： A micro-fluid ejection device structure and method therefor having improved low energy design. The devices include a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
摘要翻译： 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl，Ta2N，TaAl（O，N），TaAlSi，Ti（N，O），WSi（O，N），TaAlN等的电阻层的绝缘层上形成多个加热电阻体， 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上，以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。
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公开(公告)号：US20100213165A1
公开(公告)日：2010-08-26
申请号：US12758161
申请日：2010-04-12
CPC分类号： B41J2/1603 , B41J2/14129 , B41J2/1628 , B41J2/164 , Y10T29/49401
摘要： A micro-fluid ejection device structure and method therefor having improved low energy design. The devices include a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
摘要翻译： 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl，Ta2N，TaAl（O，N），TaAlSi，Ti（N，O），WSi（O，N），TaAlN等的电阻层的绝缘层上形成多个加热电阻体， 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上，以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。
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公开(公告)号：US07749397B2
公开(公告)日：2010-07-06
申请号：US11673795
申请日：2007-02-12
CPC分类号： B41J2/1603 , B41J2/14129 , B41J2/1628 , B41J2/164 , Y10T29/49401
摘要： A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
摘要翻译： 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl，Ta2N，TaAl（O，N），TaAlSi，Ti（N，O），WSi（O，N），TaAlN等的电阻层的绝缘层上形成多个加热电阻体， 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上，以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。
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公开(公告)号：US07414262B2
公开(公告)日：2008-08-19
申请号：US11241221
申请日：2005-09-30
申请人： Frank E. Anderson , Robert W. Cornell , Yimin Guan
发明人： Frank E. Anderson , Robert W. Cornell , Yimin Guan
IPC分类号： H01L29/06
CPC分类号： H01L29/78603 , H01L27/1292 , H01L29/66757 , H01L29/74
摘要： Electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the printed material and substrate are part of an electronic device having at least three terminals, wherein the electronic device has a charge carrier mobility of at least 10 cm2/V-s. Multi-terminal devices can have a substrate including a doped semiconductor layer and at least two doped regions formed upon the substrate. The doped regions can be doped oppositely from the semiconductor layer and exhibit a charge carrier mobility of greater than 10 cm2/V-s. Methods for making the same are also disclosed.
摘要翻译： 诸如在柔性基底上具有柔性基底和印刷材料的电子器件。 在一个实施例中，印刷材料和基底是具有至少三个端子的电子器件的一部分，其中电子器件具有至少10cm 2 / V-s的电荷载流子迁移率。 多端子器件可以具有包括掺杂半导体层和形成在衬底上的至少两个掺杂区的衬底。 掺杂区域可以与半导体层相反地掺杂并且表现出大于10cm 2 / V-s的电荷载流子迁移率。 还公开了制备其的方法。
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公开(公告)号：US07195343B2
公开(公告)日：2007-03-27
申请号：US10927796
申请日：2004-08-27
IPC分类号： B41J2/05
CPC分类号： B41J2/1603 , B41J2/14129 , B41J2/1628 , B41J2/164 , Y10T29/49401
摘要： A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
摘要翻译： 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl，Ta2N，TaAl（O，N），TaAlSi，Ti（N，O），WSi（O，N），TaAlN等的电阻层的绝缘层上形成多个加热电阻体， 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上，以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化，以在多个加热电阻器上提供流体接触层。
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公开(公告)号：US07918015B2
公开(公告)日：2011-04-05
申请号：US12336767
申请日：2008-12-17
申请人： Byron V. Bell , Robert W. Cornell , Yimin Guan , George K. Parish
发明人： Byron V. Bell , Robert W. Cornell , Yimin Guan , George K. Parish
IPC分类号： H01C17/00
CPC分类号： B41J2/14129 , B41J2202/03 , Y10T29/49082 , Y10T29/49098 , Y10T29/49099 , Y10T29/49163 , Y10T29/49346 , Y10T29/49401
摘要： A process for making a fluid ejector head for a micro-fluid ejection device. In one embodiment, the process comprises depositing a thin film resistive layer on a substrate to provide a plurality of thin film heaters. The thin film resistive layer comprises a tantalum-aluminum-nitride material consisting essentially of AlN, TaN, and TaAl alloys, and containing from about 30 to about 70 atomic % tantalum, from about 10 to about 40 atomic % aluminum and from about 5 to about 30 atomic % nitrogen.
摘要翻译： 一种用于制造微流体喷射装置的流体喷射头的方法。 在一个实施例中，该方法包括在衬底上沉积薄膜电阻层以提供多个薄膜加热器。 薄膜电阻层包括主要由AlN，TaN和TaAl合金组成的钽 - 氮化铝材料，并且含有约30至约70原子％的钽，约10至约40原子％的铝和约5至约 约30原子％的氮。
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公开(公告)号：US20090094834A1
公开(公告)日：2009-04-16
申请号：US12336767
申请日：2008-12-17
申请人： Byron V. Bell , Robert W. Cornell , Yimin Guan , George K. Parish
发明人： Byron V. Bell , Robert W. Cornell , Yimin Guan , George K. Parish
CPC分类号： B41J2/14129 , B41J2202/03 , Y10T29/49082 , Y10T29/49098 , Y10T29/49099 , Y10T29/49163 , Y10T29/49346 , Y10T29/49401
摘要： A process for making a fluid ejector head for a micro-fluid ejection device. In one embodiment, the process comprises depositing a thin film resistive layer on a substrate to provide a plurality of thin film heaters. The thin film resistive layer comprises a tantalum-aluminum-nitride material consisting essentially of AlN, TaN, and TaAl alloys, and containing from about 30 to about 70 atomic % tantalum, from about 10 to about 40 atomic % aluminum and from about 5 to about 30 atomic % nitrogen.
摘要翻译： 一种用于制造微流体喷射装置的流体喷射头的方法。 在一个实施例中，该方法包括在衬底上沉积薄膜电阻层以提供多个薄膜加热器。 薄膜电阻层包括主要由AlN，TaN和TaAl合金组成的钽 - 氮化铝材料，并且含有约30至约70原子％的钽，约10至约40原子％的铝和约5至约 约30原子％的氮。
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公开(公告)号：US07390078B2
公开(公告)日：2008-06-24
申请号：US11170894
申请日：2005-06-30
IPC分类号： B41J2/05
CPC分类号： B41J2/14129
摘要： The present disclosure is directed to a micro-fluid ejection head for a micro-fluid ejection device. The head includes a semiconductor substrate, a fluid ejection actuator supported by the semiconductor substrate, a nozzle member containing nozzle holes attached to the substrate for expelling droplets of fluid from one or more nozzle holes in the nozzle member upon activation of the ejection actuator. The substrate further includes a thermal insulating barrier layer between the semiconductor substrate and the fluid ejection actuator. The thermal insulating barrier layer includes a porous, substantially impermeable material having a thermal conductivity of less than about 1 W/m-K.
摘要翻译： 本公开涉及用于微流体喷射装置的微流体喷射头。 头部包括半导体衬底，由半导体衬底支撑的流体喷射致动器，喷嘴构件，其包含附接到衬底的喷嘴孔，用于在激活喷射致动器时从喷嘴构件中的一个或多个喷嘴孔排出流体液滴。 衬底还包括在半导体衬底和流体喷射致动器之间的绝热阻挡层。 绝热阻隔层包括具有小于约1W / m-K的热导率的多孔的基本上不可渗透的材料。
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公开(公告)号：US07080896B2
公开(公告)日：2006-07-25
申请号：US10760726
申请日：2004-01-20
申请人： Byron V. Bell , Robert W. Cornell , Yimin Guan , George K. Parish
发明人： Byron V. Bell , Robert W. Cornell , Yimin Guan , George K. Parish
IPC分类号： B41J2/05
CPC分类号： B41J2/14129 , B41J2202/03 , Y10T29/49082 , Y10T29/49098 , Y10T29/49099 , Y10T29/49163 , Y10T29/49346 , Y10T29/49401
摘要： A semiconductor substrate for a micro-fluid ejection head. The substrate includes a plurality of fluid ejection actuators disposed on the substrate. Each of the fluid ejection actuators includes a thin heater stack comprising a thin film heater and one or more protective layers adjacent the heater. The thin film heater is made of a tantalum-aluminum-nitride thin film material having a nano-crystalline structure consisting essentially of AlN, TaN, and TaAl alloys, and has a sheet resistance ranging from about 30 to about 100 ohms per square. The thin film material contains from about 30 to about 70 atomic % tantalum, from about 10 to about 40 atomic % aluminum and from about 5 to about 30 atomic % nitrogen.
摘要翻译： 一种用于微流体喷射头的半导体衬底。 衬底包括设置在衬底上的多个流体喷射致动器。 每个流体喷射致动器包括薄加热器堆叠，其包括薄膜加热器和与加热器相邻的一个或多个保护层。 薄膜加热器由具有主要由AlN，TaN和TaAl合金组成的纳米晶体结构的钽 - 氮化铝薄膜材料制成，并且具有约30至约100欧姆/平方的薄层电阻。 薄膜材料含有约30至约70原子％的钽，约10至约40原子％的铝和约5至约30原子％的氮。
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