Low ejection energy micro-fluid ejection heads
    2.
    发明授权
    Low ejection energy micro-fluid ejection heads 有权
    低喷射能量微流体喷射头

    公开(公告)号:US07195343B2

    公开(公告)日:2007-03-27

    申请号:US10927796

    申请日:2004-08-27

    IPC分类号: B41J2/05

    摘要: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.

    摘要翻译: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化,以在多个加热电阻器上提供流体接触层。

    Micro-fluid ejection device having high resistance heater film
    3.
    发明授权
    Micro-fluid ejection device having high resistance heater film 有权
    具有高电阻加热膜的微流体喷射装置

    公开(公告)号:US07080896B2

    公开(公告)日:2006-07-25

    申请号:US10760726

    申请日:2004-01-20

    IPC分类号: B41J2/05

    摘要: A semiconductor substrate for a micro-fluid ejection head. The substrate includes a plurality of fluid ejection actuators disposed on the substrate. Each of the fluid ejection actuators includes a thin heater stack comprising a thin film heater and one or more protective layers adjacent the heater. The thin film heater is made of a tantalum-aluminum-nitride thin film material having a nano-crystalline structure consisting essentially of AlN, TaN, and TaAl alloys, and has a sheet resistance ranging from about 30 to about 100 ohms per square. The thin film material contains from about 30 to about 70 atomic % tantalum, from about 10 to about 40 atomic % aluminum and from about 5 to about 30 atomic % nitrogen.

    摘要翻译: 一种用于微流体喷射头的半导体衬底。 衬底包括设置在衬底上的多个流体喷射致动器。 每个流体喷射致动器包括薄加热器堆叠,其包括薄膜加热器和与加热器相邻的一个或多个保护层。 薄膜加热器由具有主要由AlN,TaN和TaAl合金组成的纳米晶体结构的钽 - 氮化铝薄膜材料制成,并且具有约30至约100欧姆/平方的薄层电阻。 薄膜材料含有约30至约70原子%的钽,约10至约40原子%的铝和约5至约30原子%的氮。

    Low ejection energy micro-fluid ejection heads
    4.
    发明授权
    Low ejection energy micro-fluid ejection heads 有权
    低喷射能量微流体喷射头

    公开(公告)号:US08366952B2

    公开(公告)日:2013-02-05

    申请号:US12758161

    申请日:2010-04-12

    IPC分类号: G01D15/00 G11B5/127

    摘要: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices include a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.

    摘要翻译: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在选自TaAl,Ta2N,TaAl(O,N),TaAlSi,Ti(N,O),WSi(O,N),TaAlN等的电阻层的绝缘层上形成多个加热电阻体, 和TaAl / TaAlN。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上,以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。

    Heater chip with doped diamond-like carbon layer and overlying cavitation layer
    5.
    发明授权
    Heater chip with doped diamond-like carbon layer and overlying cavitation layer 有权
    加热芯片采用掺杂金刚石碳层和上覆空穴层

    公开(公告)号:US06805431B2

    公开(公告)日:2004-10-19

    申请号:US10334109

    申请日:2002-12-30

    IPC分类号: B41J205

    CPC分类号: B41J2/14129 B41J2202/03

    摘要: An inkjet printhead heater chip has a silicon substrate with a heater stack formed of a plurality of thin film layers thereon for ejecting an ink drop during use. The thin film layers include: a thermal barrier layer on the silicon substrate; a resistor layer on the thermal barrier layer; a doped diamond-like carbon layer on the resistor layer; and a cavitation layer on the doped diamond-like carbon layer. The doped diamond-like carbon layer preferably includes silicon but may also include nitrogen, titanium, tantalum, combinations thereof or other. When it includes silicon, a preferred silicon concentration ranges from 20 to 25 atomic percent. A preferred cavitation layer includes an undoped diamond-like carbon, tantalum or titanium layer. The doped diamond-like carbon layer ranges in thickness from 500 to 3000 angstroms. The cavitation layer ranges from 500 to 6000 angstroms. Inkjet printheads and printers are also disclosed.

    摘要翻译: 喷墨打印头加热器芯片具有硅衬底,其具有由其上的多个薄膜层形成的加热器堆叠,用于在使用期间喷射墨滴。 薄膜层包括:硅衬底上的热障层; 阻热层上的电阻层; 电阻层上的掺杂类金刚石碳层; 以及掺杂的类金刚石碳层上的空穴层。 掺杂的类金刚石碳层优选包括硅,但也可以包括氮,钛,钽,其组合或其它。 当其包含硅时,优选的硅浓度范围为20-25原子%。 优选的空化层包括未掺杂的类金刚石碳,钽或钛层。 掺杂的类金刚石碳层的厚度范围为500至3000埃。 空化层的范围为500至6000埃。 还公开了喷墨打印头和打印机。

    Method for making a thin film resistor
    6.
    发明授权
    Method for making a thin film resistor 有权
    制造薄膜电阻的方法

    公开(公告)号:US07918015B2

    公开(公告)日:2011-04-05

    申请号:US12336767

    申请日:2008-12-17

    IPC分类号: H01C17/00

    摘要: A process for making a fluid ejector head for a micro-fluid ejection device. In one embodiment, the process comprises depositing a thin film resistive layer on a substrate to provide a plurality of thin film heaters. The thin film resistive layer comprises a tantalum-aluminum-nitride material consisting essentially of AlN, TaN, and TaAl alloys, and containing from about 30 to about 70 atomic % tantalum, from about 10 to about 40 atomic % aluminum and from about 5 to about 30 atomic % nitrogen.

    摘要翻译: 一种用于制造微流体喷射装置的流体喷射头的方法。 在一个实施例中,该方法包括在衬底上沉积薄膜电阻层以提供多个薄膜加热器。 薄膜电阻层包括主要由AlN,TaN和TaAl合金组成的钽 - 氮化铝材料,并且含有约30至约70原子%的钽,约10至约40原子%的铝和约5至约 约30原子%的氮。

    Planarization layer for micro-fluid ejection head substrates
    7.
    发明授权
    Planarization layer for micro-fluid ejection head substrates 有权
    用于微流体喷射头基板的平面化层

    公开(公告)号:US07905569B2

    公开(公告)日:2011-03-15

    申请号:US10941493

    申请日:2004-09-15

    IPC分类号: B41J2/015 B41J2/05

    摘要: A substantially inorganic planarization layer for a micro-fluid ejection head substrate and method therefor. The planarization layer includes a plurality of layers composed of one or more dielectric compounds and at least one spin on glass (SOG) layer having a total thickness ranging from about 1 microns to about 15 microns deposited over a second metal layer of the micro-fluid ejection head substrate. A top most layer of the planarization layer is selected from one or more of the dielectric compounds and a hard mask material.

    摘要翻译: 一种用于微流体喷射头基板的基本上无机的平坦化层及其方法。 平坦化层包括由一个或多个电介质化合物组成的多个层和沉积在微流体的第二金属层上的总厚度范围为约1微米至约15微米的至少一个旋涂玻璃(SOG)层 喷射头基板。 平坦化层的最上层选自一种或多种介电化合物和硬掩模材料。

    Reduction of heat loss in micro-fluid ejection devices
    9.
    发明授权
    Reduction of heat loss in micro-fluid ejection devices 有权
    减少微流体喷射装置中的热损失

    公开(公告)号:US07390078B2

    公开(公告)日:2008-06-24

    申请号:US11170894

    申请日:2005-06-30

    IPC分类号: B41J2/05

    CPC分类号: B41J2/14129

    摘要: The present disclosure is directed to a micro-fluid ejection head for a micro-fluid ejection device. The head includes a semiconductor substrate, a fluid ejection actuator supported by the semiconductor substrate, a nozzle member containing nozzle holes attached to the substrate for expelling droplets of fluid from one or more nozzle holes in the nozzle member upon activation of the ejection actuator. The substrate further includes a thermal insulating barrier layer between the semiconductor substrate and the fluid ejection actuator. The thermal insulating barrier layer includes a porous, substantially impermeable material having a thermal conductivity of less than about 1 W/m-K.

    摘要翻译: 本公开涉及用于微流体喷射装置的微流体喷射头。 头部包括半导体衬底,由半导体衬底支撑的流体喷射致动器,喷嘴构件,其包含附接到衬底的喷嘴孔,用于在激活喷射致动器时从喷嘴构件中的一个或多个喷嘴孔排出流体液滴。 衬底还包括在半导体衬底和流体喷射致动器之间的绝热阻挡层。 绝热阻隔层包括具有小于约1W / m-K的热导率的多孔的基本上不可渗透的材料。

    Anti-reflective coatings for micro-fluid applications
    10.
    发明授权
    Anti-reflective coatings for micro-fluid applications 有权
    用于微流体应用的抗反射涂层

    公开(公告)号:US08394714B2

    公开(公告)日:2013-03-12

    申请号:US12847494

    申请日:2010-07-30

    申请人: Byron V. Bell

    发明人: Byron V. Bell

    IPC分类号: H01L21/4763

    摘要: Micro-fluid ejection heads have anti-reflective coatings. The coatings destructively interfere with light at wavelengths of interest during subsequent photo imaging processing, such as during nozzle plate imaging. Methods include determining wavelengths of photoresists. Layers are applied to the substrate and anodized. They form an oxidized layer of a predetermined thickness and reflectivity that essentially eliminates stray and scattered light during production of nozzle plates. Process conditions include voltages, biasing, lengths of time, and bathing solutions, to name a few. Tantalum and titanium oxides define further embodiments as do layer thicknesses and light wavelengths.

    摘要翻译: 微流体喷射头具有抗反射涂层。 在随后的光成像处理期间,例如在喷嘴板成像期间,涂层在感兴趣的波长处相消干涉。 方法包括确定光刻胶的波长。 将层施加到基底并进行阳极氧化。 它们形成预定厚度的氧化层和在生产喷嘴板期间基本上消除杂散和散射光的反射率。 工艺条件包括电压,偏置,时间长度和洗澡解决方案,仅举几例。 钽和钛氧化物将层的厚度和光波长定义为其它实施方案。