公开(公告)号：US20060275958A1

公开(公告)日：2006-12-07

申请号：US10568559

申请日：2004-08-20

申请人： Frank Ruess ,  Lars Oberbeck ,  Michelle Simmons ,  K.E. Goh ,  Alexander Hamilton ,  Mladen Mitic ,  Rolf Brenner ,  Neil Curson ,  Toby Hallam

发明人： Frank Ruess ,  Lars Oberbeck ,  Michelle Simmons ,  K.E. Goh ,  Alexander Hamilton ,  Mladen Mitic ,  Rolf Brenner ,  Neil Curson ,  Toby Hallam

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L23/544 ,  B82Y10/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L29/66439 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： This invention concerns the fabrication of nanoscale and atomic scale devices. The method involves creating one or more registration markers. Using a SEM or optical microscope to form an image of the registration markers and the tip of a scanning tunnelling microscope (STM). Using the image to position and reposition the STM tip to pattern the device structure. Forming the active region of the device and then encapsulating it such that one or more of the registration markers are still visible to allow correct positioning of surface electrodes. The method can be used to form any number of device structures including quantum wires, single electron transistors, arrays or gate regions. The method can also be used to produce 3D devices by patterning subsequent layers with the STM and encapsulating in between.

公开(公告)号：US07547648B2

公开(公告)日：2009-06-16

申请号：US10568559

申请日：2004-08-20

申请人： Frank J. Ruess ,  Lars Oberbeck ,  Michelle Yvonne Simmons ,  K. E. Johnson Goh ,  Alexander Rudolf Hamilton ,  Mladen Mitic ,  Rolf Brenner ,  Neil Jonathan Curson ,  Toby Hallam

发明人： Frank J. Ruess ,  Lars Oberbeck ,  Michelle Yvonne Simmons ,  K. E. Johnson Goh ,  Alexander Rudolf Hamilton ,  Mladen Mitic ,  Rolf Brenner ,  Neil Jonathan Curson ,  Toby Hallam

IPC分类号： H01L21/00

CPC分类号： H01L23/544 ,  B82Y10/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L29/66439 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： This invention concerns the fabrication of nanoscale and atomic scale devices. The method involves creating one or more registration markers. Using a SEM or optical microscope to form an image of the registration markers and the tip of a scanning tunnelling microscope (STM). Using the image to position and reposition the STM tip to pattern the device structure. Forming the active region of the device and then encapsulating it such that one or more of the registration markers are still visible to allow correct positioning of surface electrodes. The method can be used to form any number of device structures including quantum wires, single electron transistors, arrays or gate regions. The method can also be used to produce 3D devices by patterning subsequent layers with the STM and encapsulating in between.

摘要翻译： 本发明涉及纳米尺度和原子尺度装置的制造。 该方法涉及创建一个或多个注册标记。 使用SEM或光学显微镜形成对准标记和扫描隧道显微镜（STM）的尖端的图像。 使用图像定位和重新定位STM尖端以对设备结构进行图案化。 形成器件的有源区，然后封装，使得一个或多个配准标记物仍然可见，以允许表面电极的正确定位。 该方法可用于形成任何数量的器件结构，包括量子线，单电子晶体管，阵列或栅极区。 该方法还可以用于通过用STM构图后续层并封装在其间来产生3D器件。

公开(公告)号：US07097708B2

公开(公告)日：2006-08-29

申请号：US10484759

申请日：2002-08-20

申请人： Robert Graham Clark ,  Neil Jonathan Curson ,  Toby Hallam ,  Lars Oberbeck ,  Steven Richard Schofield ,  Michelle Yvonne Simmons

发明人： Robert Graham Clark ,  Neil Jonathan Curson ,  Toby Hallam ,  Lars Oberbeck ,  Steven Richard Schofield ,  Michelle Yvonne Simmons

IPC分类号： C30B25/12

CPC分类号： G06N99/002 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/18

摘要： This invention concerns nanoscale products, such as electronic devices fabricated to nanometer accuracy. It also concerns atomic scale products. These products may have an array of electrically active dopant atoms in a silicon surface, or an encapsulated layer of electrically active donor atoms. In a further aspect the invention concerns a method of fabricating such products. The methods include forming a preselected array of donor atoms incorporated into silicon. Encapsulation by growing silicon over a doped surface, after desorbing the passivating hydrogen. Also, using an STM to view donor atoms on the silicon surface during fabrication of a nanoscale device, and measuring the electrical activity of the donor atoms during fabrication of a nanoscale device. Such products and processes are useful in the fabrication of a quantum computer, but could have many other uses.

摘要翻译： 本发明涉及纳米级产品，例如以纳米精度制造的电子器件。 它也涉及原子级产品。 这些产品可以在硅表面或电活性供体原子的封装层中具有阵列的电活性掺杂剂原子。 在另一方面，本发明涉及一种制造这种产品的方法。 所述方法包括形成掺入硅中的供体原子的预选阵列。 在解吸钝化氢后，通过在掺杂表面上生长硅来封装。 此外，在制造纳米级器件期间使用STM来观察硅表面上的供体原子，并且在制造纳米尺度器件期间测量施主原子的电活性。 这样的产品和方法在量子计算机的制造中是有用的，但是可以具有许多其它用途。

公开(公告)号：US06247950B1

公开(公告)日：2001-06-19

申请号：US09271698

申请日：1999-03-18

申请人： Toby Hallam ,  Philip I. Siegel

发明人： Toby Hallam ,  Philip I. Siegel

IPC分类号： G06K1906

CPC分类号： G06K13/0806 ,  G06K13/08

摘要： According to the present invention there is provided apparatus for removing a card from an opening in an electrical device. The apparatus comprises: a card including a semiconductor chip capable of making electrical connection with a contact in the opening and wherein the cards fits into the opening with substantially no part protruding therefrom and a tool that is adapted to effect removal of the card from the opening. This has the advantage that the card makes the appropriate internal contacts and can only be removed by authorized users. This stops theft of the card from retail outlets. In addition, the invention also prevents children and animals removing the card and damaging it in the home environment.

摘要翻译： 根据本发明，提供了一种用于从电气设备中的开口移除卡的装置。 该装置包括：卡片，其包括能够与开口中的触点电连接的半导体芯片，并且其中卡片基本上没有从其中突出的部件装配到开口中，以及适于实现卡片从开口移除的工具 。 这具有这样的优点：卡片制作适当的内部联系人，只能由授权用户删除。 这样就可以从零售商处盗取这张卡片。 此外，本发明还防止儿童和动物在家庭环境中移除卡片并损坏卡片。