公开(公告)号：US5308795A

公开(公告)日：1994-05-03

申请号：US971734

申请日：1992-11-04

申请人： Frank W. Hawley ,  Yen Yeouchung

发明人： Frank W. Hawley ,  Yen Yeouchung

IPC分类号： H01L23/525 ,  H01L21/44

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  Y10S148/055

摘要： A method for fabricating a metal-to-metal antifuse comprises the steps of (1) forming and defining a first metal interconnect layer; (2) forming an interlayer dielectric layer; (3) forming an antifuse via in the interlayer dielectric layer to expose the first metal interconnect layer; (4) depositing a via metal layer into a portion of the volume defining the antifuse via; (5) forming a planarizing layer of an insulating material in the antifuse via sufficient to fill a remaining portion of the volume defining the antifuse via; (6) etching the planarizing layer to expose an upper surface of the via metal layer and an upper surface of the interlayer dielectric layer so as to form a substantially planar surface comprising the upper surface of the interlayer dielectric layer, the planarizing layer, and the upper surface of the via metal layer; (7) forming an antifuse material layer over the substantially planar surface; (8) forming a metal capping layer over the antifuse material layer; and (9) defining the antifuse material layer and the metal capping layer.

摘要翻译： 制造金属对金属反熔丝的方法包括以下步骤：（1）形成和限定第一金属互连层; （2）形成层间电介质层; （3）在所述层间电介质层中形成反熔丝通孔以暴露所述第一金属互连层; （4）将通孔金属层沉积到限定反熔丝通孔的体积的一部分中; （5）在所述反熔丝中形成绝缘材料的平坦化层，以足以填充限定所述反熔丝通孔的所述体积的剩余部分; （6）蚀刻平坦化层以暴露通孔金属层的上表面和层间电介质层的上表面，以便形成基本平坦的表面，该表面包括层间电介质层的上表面，平坦化层和 通孔金属层的上表面; （7）在所述基本上平坦的表面上形成反熔丝材料层; （8）在所述反熔丝材料层上形成金属覆盖层; 和（9）限定反熔丝材料层和金属覆盖层。

公开(公告)号：US6001693A

公开(公告)日：1999-12-14

申请号：US999970

申请日：1995-09-01

申请人： Yen Yeouchung ,  Shih-Oh Chen ,  Leuh Fang ,  Elaine K. Poon ,  James B. Kruger

发明人： Yen Yeouchung ,  Shih-Oh Chen ,  Leuh Fang ,  Elaine K. Poon ,  James B. Kruger

IPC分类号： H01L23/525 ,  H01L21/82

CPC分类号： H01L23/5252 ,  H01L2924/0002

摘要： The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed in the antifuse cell opening to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer, and a top electrode disposed over the second barrier metal layer.

摘要翻译： 本发明的反熔丝结构包括底部平面化电极，设置在底部电极上的ILD，暴露底部电极的ILD中和穿过ILD的反熔丝电池;设置在反熔丝电池开口中的第一阻挡金属层，以保护反熔丝 材料层从底部电极扩散并形成减小面积的有效底部电极，因此降低了器件的电容，设置在反熔丝电池开口中并在第一阻挡金属层上方的反熔丝材料层，第二阻挡金属层 设置在反熔丝材料层之上，以及设置在第二阻挡金属层上的顶电极。