Method of making a metal to metal antifuse
    1.
    发明授权
    Method of making a metal to metal antifuse 失效
    制造金属对金属反熔丝的方法

    公开(公告)号:US6001693A

    公开(公告)日:1999-12-14

    申请号:US999970

    申请日:1995-09-01

    IPC分类号: H01L23/525 H01L21/82

    CPC分类号: H01L23/5252 H01L2924/0002

    摘要: The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed in the antifuse cell opening to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer, and a top electrode disposed over the second barrier metal layer.

    摘要翻译: 本发明的反熔丝结构包括底部平面化电极,设置在底部电极上的ILD,暴露底部电极的ILD中和穿过ILD的反熔丝电池;设置在反熔丝电池开口中的第一阻挡金属层,以保护反熔丝 材料层从底部电极扩散并形成减小面积的有效底部电极,因此降低了器件的电容,设置在反熔丝电池开口中并在第一阻挡金属层上方的反熔丝材料层,第二阻挡金属层 设置在反熔丝材料层之上,以及设置在第二阻挡金属层上的顶电极。

    Metal to metal antifuse
    3.
    发明授权
    Metal to metal antifuse 失效
    金属对金属反熔丝

    公开(公告)号:US5541441A

    公开(公告)日:1996-07-30

    申请号:US319170

    申请日:1994-10-06

    IPC分类号: H01L23/525 H01L29/08

    CPC分类号: H01L23/5252 H01L2924/0002

    摘要: The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed in the antifuse cell opening to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer, and a top electrode disposed over the second barrier metal layer.

    摘要翻译: 本发明的反熔丝结构包括底部平面化电极,设置在底部电极上的ILD,暴露底部电极的ILD中和穿过ILD的反熔丝电池;设置在反熔丝电池开口中的第一阻挡金属层,以保护反熔丝 材料层从底部电极扩散并形成减小面积的有效底部电极,因此降低了器件的电容,设置在反熔丝电池开口中并在第一阻挡金属层上方的反熔丝材料层,第二阻挡金属层 设置在反熔丝材料层之上,以及设置在第二阻挡金属层上的顶电极。

    Method and apparatus for lithographic rotate and repeat processing
    5.
    发明授权
    Method and apparatus for lithographic rotate and repeat processing 失效
    光刻旋转和重复处理的方法和装置

    公开(公告)号:US4613981A

    公开(公告)日:1986-09-23

    申请号:US573524

    申请日:1984-01-24

    CPC分类号: G03F7/70425 G03F7/70433

    摘要: An X-ray lithography apparatus permits the successive exposure of each of four quadrants of a semiconductor wafer through a single mask. The mask overlays one quadrant of the wafer at a time and the wafer is rotated through 90 degrees after exposure of a quadrant to allow exposure of succeeding wafer quadrants; each wafer quadrant is independently aligned to the mask prior to exposure. In an alternative preferred embodiment, a rotatable diaphragm is used to select a single mask quadrant from a mask which overlays the entire surface of the semiconductor wafer. Both the wafer and the diaphragm may be rotated to allow various exposure combinations of mask and wafer quadrants.

    摘要翻译: X射线光刻设备允许半导体晶片的四个象限中的每一个通过单个掩模的连续曝光。 掩模一次覆盖晶片的一个象限,并且在象限曝光后晶片旋转90度以允许后续晶圆象限的曝光; 每个晶片象限在曝光之前独立地对准掩模。 在替代的优选实施例中,可旋转振膜用于从覆盖半导体晶片的整个表面的掩模中选择单个掩模象限。 可以旋转晶片和隔膜以允许掩模和晶片象限的各种曝光组合。

    Method of making an improved MESFET semiconductor device
    6.
    发明授权
    Method of making an improved MESFET semiconductor device 失效
    制造改进的MESFET半导体器件的方法

    公开(公告)号:US4481704A

    公开(公告)日:1984-11-13

    申请号:US339543

    申请日:1982-01-15

    摘要: An improved MESFET integrated circuit device with a metal-semiconductor diode as the control element and a source and drain as other device elements is fabricated using a self-aligned gate process which consists of an implanted channel stopper underneath a thick field oxide, depletion and enhancement mode device channel implants, implanted source and drain regions, selective oxidation to form self-aligned gates, metal-semiconductor junctions as control elements, barrier metal and a thin film metallization system. The process and device structure are suited for high packing density, very low speed power product and ease of fabrication making it attractive for digital applications.

    摘要翻译: 具有金属半导体二极管作为控制元件的改进的MESFET集成电路器件,以及作为其它器件元件的源极和漏极使用自对准栅极工艺制造,该栅极工艺由厚场氧化物下的注入沟道截止体,耗尽和增强 模式器件沟道植入,植入源极和漏极区域,选择性氧化以形成自对准栅极,金属 - 半导体结作为控制元件,阻挡金属和薄膜金属化系统。 该工艺和器件结构适用于高封装密度,极低速功率产品和易于制造,使其对数字应用具有吸引力。

    MESFET semiconductor device and method of making
    7.
    发明授权
    MESFET semiconductor device and method of making 失效
    MESFET半导体器件及其制造方法

    公开(公告)号:US4201997A

    公开(公告)日:1980-05-06

    申请号:US898582

    申请日:1978-04-21

    摘要: An improved MESFET integrated circuit device with a metal-semiconductor diode as the control element and a source and drain as other device elements is fabricated using a self-aligned gate process which consists of an implanted channel stopper underneath a thick field oxide, depletion and enhancement mode device channel implants, implanted source and drain regions, selective oxidation to form self-aligned gates, metal-semiconductor junctions as control elements, barrier metal and a thin film metallization system. The process and device structure are suited for high packing density, very low speed power product and ease of fabrication making it attractive for digital applications.

    摘要翻译: 具有金属半导体二极管作为控制元件的改进的MESFET集成电路器件,以及作为其它器件元件的源极和漏极使用自对准栅极工艺制造,该栅极工艺由厚场氧化物下的注入沟道截止体,耗尽和增强 模式器件沟道植入,植入源极和漏极区域,选择性氧化以形成自对准栅极,金属 - 半导体结作为控制元件,阻挡金属和薄膜金属化系统。 该工艺和器件结构适用于高封装密度,极低速功率产品和易于制造,使其对数字应用具有吸引力。

    Method for achieving high quality aqueous ink-jet printing on plain paper at high print speeds
    9.
    发明授权
    Method for achieving high quality aqueous ink-jet printing on plain paper at high print speeds 有权
    用于以高打印速度在普通纸上实现高质量水性喷墨打印的方法

    公开(公告)号:US06428160B2

    公开(公告)日:2002-08-06

    申请号:US09726100

    申请日:2000-11-29

    IPC分类号: B41J201

    CPC分类号: B41J11/002

    摘要: An apparatus and method for ink-jet printing on a recording medium is provided which includes the steps of jetting aqueous ink drops on paper in the form of an image. The aqueous ink used is a slow-drying (high-surface tension) ink which does not penetrate the paper/paper fibers for a relatively long time. Prior to penetration of the paper/paper fibers, the water in the droplet is quickly evaporated from the ink while still resident on the paper surface. The evaporation process is substantially completed prior to an additional liquid ink being jetted onto the same or adjoining location of the recording medium. The evaporation is rapid enough to prevent the resident ink from substantially migrating/wicking to any adjacent location or into the recording medium. Further the drying energy is transferred to the resident ink spots from the same direction as the printheads ensuring less energy requirement.

    摘要翻译: 提供了一种用于在记录介质上进行喷墨印刷的设备和方法,其包括以图像形式将水性墨滴喷射在纸上的步骤。 使用的水性油墨是一种慢干(高表面张力)油墨,其不会在相对长的时间内渗透纸/纸纤维。 在纸/纸纤维渗透之前,液滴中的水从墨水中迅速蒸发,同时仍然驻留在纸张表面上。 在附加的液体墨水喷射到记录介质的相同或相邻位置之前,蒸发过程基本上完成。 蒸发速度足够快以防止驻留的墨水基本上迁移/吸附到任何相邻位置或记录介质中。 此外,干燥能量从与打印头相同的方向转移到驻留的墨点,确保较少的能量需求。

    Light trap for blocking reflection and scattering of light
    10.
    发明授权
    Light trap for blocking reflection and scattering of light 失效
    用于阻挡光的反射和散射的光阱

    公开(公告)号:US5144524A

    公开(公告)日:1992-09-01

    申请号:US643863

    申请日:1991-01-22

    摘要: A surface analysis scanner system includes calibration targets, which include a target substrate and a film covering the surface of the target substrate which is scanned by the surface scanner. The film is antireflective to the particular scanned light. Particles which contaminate the antireflectance film on the substrate do not scatter sufficient light to be detected by the surface analysis scanner detectors and thus do not interfere with the calibration of the scanner. The calibration targets may include reference features which are etched into the substrate surface or deposited on the antireflectance coated substrate surface which scatter light in a manner similar to particles on a surface. The reference features may also be embedded in a transparent material supported by the antireflectance coated substrate with a second antireflectance film coating the upper surface of the transparent material. A surface analysis scanner system may also include a support structure for supporting an object to be scanned, an aperture structure, and a light trap structure for blocking the scanned light. Each structure includes a substrate having a coating of antireflectance film. A surface analysis scanner system may also include methods, utilizing antireflectance films, for reducing the amount of scanned light scattered by particles on a scanner system surface.

    摘要翻译: 表面分析扫描仪系统包括校准目标,其包括目标衬底和覆盖由表面扫描器扫描的目标衬底的表面的膜。 该胶片对特定的扫描光具有抗反射性。 污染基板上的抗反射膜的颗粒不会散射足够的光以由表面分析扫描仪检测器检测,因此不会干扰扫描仪的校准。 校准目标可以包括蚀刻到衬底表面中或沉积在抗反射涂层衬底表面上的参考特征,其以类似于表面上的颗粒的方式散射光。 参考特征也可以嵌入由抗反射涂层基板支撑的透明材料中,其中第二抗反射膜涂覆在透明材料的上表面上。 表面分析扫描仪系统还可以包括用于支撑待扫描物体的支撑结构,孔结构和用于阻挡扫描光的光阱结构。 每个结构包括具有抗反射膜涂层的基板。 表面分析扫描仪系统还可以包括利用抗反射膜的方法,以减少由扫描仪系统表面上的颗粒散射的扫描光的量。