Method for Preparing Ion Source From Nanoparticles
    2.
    发明申请
    Method for Preparing Ion Source From Nanoparticles 有权
    从纳米颗粒制备离子源的方法

    公开(公告)号:US20110012024A1

    公开(公告)日:2011-01-20

    申请号:US12560451

    申请日:2009-09-16

    IPC分类号: H01J27/02

    摘要: A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology.

    摘要翻译: 提供了一种从纳米颗粒制备离子源的方法。 该方法包括以下步骤:提供纳米颗粒,将纳米颗粒从固体状态汽化成气态,并使气体离子化形成离子源。 离子源通过将固体纳米颗粒置于不锈钢管中,将固体纳米颗粒加热并汽化成气态并使气体离子化来制备。 气体可以在比使用固体块时低的加热温度下形成,因为固体纳米颗粒具有比固体块更低的熔点。 因此,加热温度降低,离子源的制备时间缩短。 此外,在相同温度下,从纳米颗粒制备的离子源提供更高的蒸气压力,并且允许比从固体块制备离子源时更高的注入剂量,从而扩大了离子注入技术的适用性。

    Method for preparing ion source from nanoparticles
    3.
    发明授权
    Method for preparing ion source from nanoparticles 有权
    从纳米颗粒制备离子源的方法

    公开(公告)号:US08283638B2

    公开(公告)日:2012-10-09

    申请号:US12560451

    申请日:2009-09-16

    IPC分类号: H01J27/02

    摘要: A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology.

    摘要翻译: 提供了一种从纳米颗粒制备离子源的方法。 该方法包括以下步骤:提供纳米颗粒,将纳米颗粒从固体状态汽化成气态,并使气体离子化形成离子源。 离子源通过将固体纳米颗粒置于不锈钢管中,将固体纳米颗粒加热并汽化成气态并使气体离子化来制备。 气体可以在比使用固体块时低的加热温度下形成,因为固体纳米颗粒具有比固体块更低的熔点。 因此,加热温度降低,离子源的制备时间缩短。 此外,在相同温度下,从纳米颗粒制备的离子源提供更高的蒸气压力,并且允许比从固体块制备离子源时更高的注入剂量,从而扩大了离子注入技术的适用性。