公开(公告)号：US20110098533A1

公开(公告)日：2011-04-28

申请号：US12847223

申请日：2010-07-30

申请人： Fumiyuki ONODA ,  Hiroyuki USHIFUSA ,  Tomohiko ODA ,  Jun HASEGAWA ,  Masami FUKUCHI ,  Katsumi HIRAKAWA

发明人： Fumiyuki ONODA ,  Hiroyuki USHIFUSA ,  Tomohiko ODA ,  Jun HASEGAWA ,  Masami FUKUCHI ,  Katsumi HIRAKAWA

IPC分类号： A61B1/00 ,  A61B1/07

CPC分类号： G02B23/2476 ,  A61B1/0051 ,  A61B1/31 ,  A61B5/06 ,  A61B5/065 ,  A61B2034/2061

摘要： A medical instrument including a distortion detection probe disposed in an insertion portion to be inserted into the interior of an examinee provided with a plurality of FBG sensor sections that detect distortion of the insertion portion, a coordinate calculation section that calculates first three-dimensional coordinates of the respective FBG sensor sections according to a first three-dimensional coordinate system whose origin is a predetermined position based on the detection results of the FBG sensor sections, a coordinate system setting section that sets a second three-dimensional coordinate system based on the first three-dimensional coordinates of the respective FBG sensor sections, a coordinate transformation section that transforms the first three-dimensional coordinates of the respective FBG sensor sections into second three-dimensional coordinates according to the second three-dimensional coordinate system set by the coordinate system setting section and a shape display section that displays the shape of the insertion portion based on the second three-dimensional coordinates transformed by the coordinate transformation section.

摘要翻译： 一种医疗器械，其特征在于，包括设置在被插入到被检体的内部的插入部的畸变检测探针，所述受检者设置有检测所述插入部的变形的多个FBG传感器部，计算第一三维坐标 根据基于FBG传感器部的检测结果的原点为预定位置的第一三维坐标系的各个FBG传感器部，基于前三个坐标系设定第二三维坐标系的坐标系设定部 相应FBG传感器部分的三维坐标，根据由坐标系设置部分设置的第二三维坐标系将各个FBG传感器部分的第一三维坐标变换为第二三维坐标的坐标变换部分 和形状显示部 基于由坐标变换部变换的第二三维坐标显示插入部的形状。

公开(公告)号：US20120309140A1

公开(公告)日：2012-12-06

申请号：US13451078

申请日：2012-04-19

申请人： Tomohiko ODA ,  Takahiro KAWASHIMA

发明人： Tomohiko ODA ,  Takahiro KAWASHIMA

IPC分类号： H01L21/336 ,  B01J19/12 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02691 ,  H01L27/1285 ,  H01L29/66765

摘要： A crystalline silicon thin film is formed by irradiating a silicon thin film with a laser beam. The laser beam is a continuous wave laser beam. An intensity distribution of the laser beam in a first region about a center of the intensity distribution is symmetric on an anterior side and a posterior side of the center. The intensity distribution in a second region about the center is asymmetric on the anterior side and the posterior side. The first region is from the maximum intensity of the laser beam at the center to an intensity half of the maximum intensity. The second region is at most equal to the half of the maximum intensity of the laser beam. In the second region, an integral intensity value on the posterior side is larger than on the anterior side.

摘要翻译： 通过用激光束照射硅薄膜来形成晶体硅薄膜。 激光束是连续波激光束。 激光束在强度分布中心附近的第一区域的强度分布在中心的前侧和后侧是对称的。 围绕中心的第二区域的强度分布在前侧和后侧是不对称的。 第一区域是从中心处的激光束的最大强度到最大强度的一半的强度。 第二区域最多等于激光束的最大强度的一半。 在第二区域中，后侧的积分强度值大于前侧的积分强度值。

公开(公告)号：US20110318891A1

公开(公告)日：2011-12-29

申请号：US13228804

申请日：2011-09-09

申请人： Tomohiko ODA ,  Takahiro KAWASHIMA

发明人： Tomohiko ODA ,  Takahiro KAWASHIMA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/42384 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66765 ,  H01L29/78678

摘要： A method of crystallizing a silicon thin film, which enables uniforming the size of a crystalline grain of the silicon thin film, includes: a second process of stacking, on a substrate, a first gate electrode having a first reflectivity; a third process of stacking a second gate electrode on the first gate electrode, the second gate electrode having a second reflectivity lower than the first reflectivity and including a top face having an area smaller than an area of the top face of the first gate electrode; a fourth process of stacking a gate insulation film to cover a first region and a second region; a fifth process of stacking a noncrystalline silicon thin film on the stacked gate insulation film; and a sixth process of crystallizing the noncrystalline silicon thin film by irradiating the noncrystalline silicon thin film from above with a laser beam.

摘要翻译： 使能够使硅薄膜的晶粒尺寸均匀化的硅薄膜的结晶方法包括：在基板上堆叠具有第一反射率的第一栅电极的第二工序; 在所述第一栅电极上层叠第二栅电极的第三工序，所述第二栅电极具有比所述第一反射率低的第二反射率，并且包括具有小于所述第一栅电极的顶面的面积的面的顶面; 堆叠栅极绝缘膜以覆盖第一区域和第二区域的第四工艺; 堆叠栅极绝缘膜上的非晶硅薄膜的第五工序; 以及通过用激光束从上方照射非晶硅薄膜来使非晶硅薄膜结晶的第六工序。

公开(公告)号：US20110297950A1

公开(公告)日：2011-12-08

申请号：US13212465

申请日：2011-08-18

申请人： Tomoya KATO ,  Tomohiko ODA ,  Sei OOTAKA

发明人： Tomoya KATO ,  Tomohiko ODA ,  Sei OOTAKA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L21/02683 ,  H01L21/02532 ,  H01L27/1281 ,  H01L27/1285

摘要： To provide a method of manufacturing a crystalline semiconductor film having a crystal structure with favorable in-plane uniformity. The method includes: irradiating an amorphous semiconductor film with a continuous-wave laser beam to increase a temperature of the amorphous semiconductor film to a range of 600° C. to 1100° C., the continuous-wave laser beam having a light intensity distribution continuously convex upward on each of major and minor axes; crystallizing the amorphous semiconductor film at the temperature increased to the range of 600° C. to 1100° C.; and increasing a crystal grain size of the crystallized amorphous semiconductor film, as a result of an increase in an in-plane temperature of the crystallized amorphous film to a range of 1100° C. to 1414° C. by latent heat released in the crystallizing of the amorphous semiconductor film.

摘要翻译： 提供一种制造具有良好的面内均匀性的晶体结构的结晶半导体膜的方法。 该方法包括：用连续波激光束照射非晶半导体膜以将非晶半导体膜的温度升高到600℃至1100℃的范围，具有光强度分布的连续波激光束 每个主轴和短轴上均向上凸起; 在升温到600℃至1100℃的范围内使非晶半导体膜结晶化。 并且通过在结晶化中释放的潜热使结晶化非晶膜的面内温度升高到1100℃至1414℃的范围，从而提高结晶化非晶半导体膜的晶粒度。 的非晶半导体膜。