公开(公告)号：US20240332368A1

公开(公告)日：2024-10-03

申请号：US18129457

申请日：2023-03-31

Applicant: GaN Systems Inc.

Inventor： Vineet Unni ,  Thomas MacElwee

IPC: H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/2003 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7786

Abstract: A GaN semiconductor power transistor structure with a stepped gate field plate, and a method of fabrication is disclosed. The stepped gate field plate is formed using contact metal and/or interconnect metal. The stepped structure of the gate field plate is defined by dielectric etching to form openings for the stepped gate field plate, and the dielectric thickness under the gate field plate is sized and stepped to shape appropriately the electric field in the region between the gate and drain. The resulting stepped gate field plate structure is less sensitive to limitations of stepped field plates fabricated by a lift-off metal process.

公开(公告)号：US20240282827A1

公开(公告)日：2024-08-22

申请号：US18172916

申请日：2023-02-22

Applicant: GAN SYSTEMS INC.

Inventor： Marco A. ZUNIGA ,  Thomas William MACELWEE ,  Rohan SAMSI ,  Lucas Andrew Milner ,  Vineet Unni ,  Jayasimha S. PRASAD ,  Ashutosh Ravindra JOHARAPURKAR ,  Ramesh G. KARPUR

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/201 ,  H01L29/778

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/7786

Abstract: The biasing of one or more field plates of a high electron mobility transistor (a HEMT) with a non-zero voltage to thereby affect the electric field profile of the HEMT. The non-zero voltage may be a constant DC voltage, or perhaps may be a voltage that changes over time. The use of a non-zero voltage allows for greater ability to regulate and reduce the electric field occurring in the semiconductor channel region, especially at the field plate. Further, when the electric field occurring at the field plate is reduced, the overall size of the HEMT can also be reduced as compared to applying a zero voltage to the field plate. Alternatively, or in addition, applying a non-zero voltage to the field plate allows the voltage levels handled by the HEMT to be increased as compared to simply grounding the field plate.