公开(公告)号：US20130241605A1

公开(公告)日：2013-09-19

申请号：US13834301

申请日：2013-03-15

Applicant: GE ENERGY POWER CONVERSION TECHNOLOGY LTD.

Inventor： Stephane RICHARD ,  Herve CARA ,  Jean-Marc NICOLAI

IPC: H03K17/14

CPC classification number: H03K17/14 ,  H03K17/107

Abstract: The system (21) includes: a power transistor (22), a data medium (60) including data relating to the manufacturing tolerance (Tol) of at least one electric parameter of the transistor (22), an electric circuit (26) for controlling the transistor adapted so as to operate for a reference value of the parameter (VREF), an electric circuit (64) having an inductance of less than 100 nH and such that the assembly (70) formed with the circuit (64) and the transistor (22) has a value for the parameter, for which the deviation in absolute with the reference value is strictly less than the manufacturing tolerance (Tol).

Abstract translation: 系统（21）包括：功率晶体管（22），包括与晶体管（22）的至少一个电参数的制造公差（Tol））有关的数据的数据介质（60），用于 控制所述晶体管以适于所述参数（VREF）的参考值操作;电路（64），其具有小于100nH的电感，并且使得由所述电路（64）形成的所述组件（70）和所述电路 晶体管（22）具有参数的值，绝对值与参考值的偏差严格小于制造公差（Tol）。