公开(公告)号：US3709729A

公开(公告)日：1973-01-09

申请号：US3709729D

申请日：1971-01-20

Applicant: GEN ELECTRIC

Inventor： HALL J

IPC: H01L21/04 ,  B44D1/18

CPC classification number: H01L29/6606 ,  H01L21/0485

Abstract: OHMIC CONTACT IS MADE TO P-TYPE SILICON CARBIDE BY DEPOSITING A FILM OF NICKEL, CHROMIUM OR NICKEL-CHROME THEREON WHILE HEATING THE SILICON CARBIDE AT A TEMPERATURE OF ABOUT 600* TO 800* C.

公开(公告)号：US3784926A

公开(公告)日：1974-01-08

申请号：US3784926D

申请日：1972-05-10

Applicant: GEN ELECTRIC

Inventor： HALL J

IPC: H03F3/10 ,  H03L7/24 ,  H03F3/60

CPC classification number: H03L7/24 ,  H03F3/10

Abstract: A relatively high power, good quality microwave power amplifier is provided by a transferred-electron device (TED) oscillator and a negative resistance power amplifier having an IMPATT diode. The oscillator and amplifier are coupled together by circulators, and low power, frequency modulated input signals are injected into the oscillator to vary the oscillator frequency. Signals from the oscillator are applied to the amplifier and amplified. High quality signals at frequencies above 6-18 gigahertz and at power levels greater than 1 watt can be obtained with this amplifier.

Abstract translation: 由具有IMPATT二极管的转移电子器件（TED）振荡器和负电阻功率放大器提供相对高功率，优质的微波功率放大器。 振荡器和放大器通过循环器耦合在一起，并且将低功率调频输入信号注入振荡器以改变振荡器频率。 来自振荡器的信号被施加到放大器并被放大。 该放大器可以获得高于6-18千兆赫兹的频率和功率水平大于1瓦特的高质量信号。

公开(公告)号：US3747032A

公开(公告)日：1973-07-17

申请号：US3747032D

申请日：1971-10-29

Applicant: GEN ELECTRIC

Inventor： HALL J ,  PEPPIATT H

IPC: H01P7/04 ,  H03B1/00 ,  H03B5/18 ,  H03C7/02 ,  H03C3/20

CPC classification number: H03B5/1805 ,  H01P7/04 ,  H03B2201/014 ,  H03B2201/0208 ,  H03C7/027

Abstract: A voltage-variable capacity diode is coupled through a one-third wavelength transmission line to a resonant cavity. The capacity of the diode is varied by a modulating voltage so as to change the resonant frequency of the cavity, and hence the resonant frequency of an oscillator. The transmission line causes the resonant frequency of the cavity to vary more linearly over a relatively wide band as a function of the modulating voltage.

Abstract translation: 电压可变容量二极管通过三分之一波长传输线耦合到谐振腔。 二极管的容量由调制电压变化，从而改变空腔的谐振频率，从而改变振荡器的谐振频率。 传输线使得腔的谐振频率随着调制电压的变化在相对较宽的频带上更线性地变化。