专利检索 ap:("GEN ELECTRIC") AND inv:"SHAVER PAUL J" 第 1 页

1.

发明授权
Operation of series connected gunn effect devices 失效

公开(公告)号：US3516018A

公开(公告)日：1970-06-02

申请号：US3516018D

申请日：1968-06-13

申请人： GEN ELECTRIC

发明人： YU SE PUAN , SHAVER PAUL J , TANTRAPORN WIROJANA

IPC分类号： H03B9/14 , H03B7/06

CPC分类号： H03B9/143

2.

发明授权
Methods and apparatus for measuring the content of hydrogen or reducing gases in an atmosphere 失效
标题翻译：用于测量大气中氢气或还原气体的含量的方法和装置

公开(公告)号：US3479257A

公开(公告)日：1969-11-18

申请号：US3479257D

申请日：1966-11-25

申请人： GEN ELECTRIC

发明人： SHAVER PAUL J

IPC分类号： G01N27/12 , C23B5/50 , B01K3/00

CPC分类号： G01N27/12 , Y10T436/173845 , Y10T436/184 , Y10T436/22

3.

发明授权
Highly efficient subcritically doped electron-transfer effect devices 失效
标题翻译：高效的亚信号转换电子传输效应器件

公开(公告)号：US3600705A

公开(公告)日：1971-08-17

申请号：US3600705D

申请日：1969-02-27

申请人： GEN ELECTRIC

发明人： TANTRAPORN WIROJANA , YU SE PUAN , SHAVER PAUL J

IPC分类号： H01L47/00 , H03B9/12 , H03B7/06

CPC分类号： H03B9/12 , H01L47/00

摘要： The subcritically-doped injection-current-limited (SDICL) microwave amplifier device comprises a bulk semiconductor having a doping density-length (noL) product below the critical value needed to sustain Gunn oscillation, in which the electric field is maintained approximately uniform above the threshold field in the vicinity of the cathode and elsewhere by limiting the injection of charge carriers. The injection current is limited by the conduction characteristics of the cathode structure or by tapering the bulk semiconductor. The SDICL device is DC stable, has high efficiency, is designed to operate over a wide range of frequencies, and can be connected directly in series or seriesparallel for higher power levels in amplifier and oscillator circuits.