公开(公告)号：US20240096936A1

公开(公告)日：2024-03-21

申请号：US17948670

申请日：2022-09-20

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Collin William Hitchcock ,  Reza Ghandi

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L29/1037 ,  H01L29/66068 ,  H01L29/7827 ,  H01L29/1608

Abstract: A super-junction (SJ) device includes a first epitaxial (epi layer) that forms a first SJ layer of the SJ device and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area and a termination area of the first epi layer includes a first set of SJ pillars that have a particular doping concentration of a first conductivity type and a second set of SJ pillars that have the particular doping concentration of a second conductivity type. A termination area of the second epi layer includes one or more implanted regions that form a junction termination that overlaps with at least one SJ pillar of the first set of SJ pillars or the second set of SJ pillars in the termination area of the first epi layer.

公开(公告)号：US20240038836A1

公开(公告)日：2024-02-01

申请号：US17878655

申请日：2022-08-01

Applicant: General Electric Company

Inventor： Collin William Hitchcock ,  Reza Ghandi

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/266 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L29/0634 ,  H01L29/7813 ,  H01L29/0696 ,  H01L21/266 ,  H01L29/66712 ,  H01L29/1608

Abstract: A semiconductor device includes a first epitaxial (epi) layer that forms a first super-junction (SJ) layer of the semiconductor device and a second epi layer disposed on the first SJ layer that forms a device layer of the semiconductor device. The first epi layer includes oppositely doped SJ pillars that extend along a first direction within the SJ layer. The device layer includes device structures of a striped metal-oxide-semiconductor field-effect transistor (MOSFET) device cell that extends along a second direction within the device layer. The angle between the first direction and the second direction is substantially between forty-five degrees and ninety degrees, inclusive.