公开(公告)号：US20170345890A1

公开(公告)日：2017-11-30

申请号：US15164928

申请日：2016-05-26

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Peter Almern Losee ,  Alexander Viktorovich Bolotnikov ,  Yang Sui

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/761 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0623 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/7832 ,  H01L29/872

Abstract: Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device may include a first layer having a first conductivity type; a second layer disposed atop the first layer, the second layer having the first conductivity type; a termination region formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.

公开(公告)号：US10541300B2

公开(公告)日：2020-01-21

申请号：US15164928

申请日：2016-05-26

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Peter Almern Losee ,  Alexander Viktorovich Bolotnikov ,  Yang Sui

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L21/761 ,  H01L29/10 ,  H01L29/66

Abstract: Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device may include a first layer having a first conductivity type; a second layer disposed atop the first layer, the second layer having the first conductivity type; a termination region formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.

公开(公告)号：US11063115B2

公开(公告)日：2021-07-13

申请号：US16708001

申请日：2019-12-09

Applicant: General Electric Company

Inventor： Peter Almern Losee ,  Alexander Viktorovich Bolotnikov ,  Yang Sui

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/08 ,  H01L21/761 ,  H01L29/10 ,  H01L29/739 ,  H01L29/872

Abstract: Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device may include a first layer having a first conductivity type; a second layer disposed atop the first layer, the second layer having the first conductivity type; a termination region formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.

公开(公告)号：US20200185493A1

公开(公告)日：2020-06-11

申请号：US16708001

申请日：2019-12-09

Applicant: General Electric Company

Inventor： Peter Almern Losee ,  Alexander Viktorovich Bolotnikov ,  Yang Sui

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/10 ,  H01L21/761 ,  H01L29/16 ,  H01L29/78 ,  H01L29/08

Abstract: Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device may include a first layer having a first conductivity type; a second layer disposed atop the first layer, the second layer having the first conductivity type; a termination region formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.