公开(公告)号：US11257983B2

公开(公告)日：2022-02-22

申请号：US16461256

申请日：2019-04-10

申请人： GLO AB

发明人： Richard P. Schneider, Jr. ,  Benjamin Leung ,  Fariba Danesh ,  Zulal Tezcan Ozel ,  Miao-Chan Tsai

IPC分类号： H01L33/24 ,  H01L27/15 ,  H01L33/36 ,  H01L33/46 ,  H01L33/62 ,  H01L25/075 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

摘要： A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.

公开(公告)号：US20200274029A1

公开(公告)日：2020-08-27

申请号：US16461256

申请日：2019-04-10

申请人： GLO AB

发明人： Richard P. Schneider, JR. ,  Benjamin Leung ,  Fariba Danesh ,  Zulal Tezcan Ozel ,  Miao-Chan Tsai

IPC分类号： H01L33/24 ,  H01L27/15 ,  H01L33/36 ,  H01L33/46 ,  H01L33/62 ,  H01L25/075 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

摘要： A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.

公开(公告)号：US10707374B2

公开(公告)日：2020-07-07

申请号：US16123182

申请日：2018-09-06

申请人： GLO AB

发明人： Fariba Danesh ,  Benjamin Leung ,  Tsun Lau ,  Zulal Tezcan ,  Miao-Chan Tsai ,  Max Batres ,  Michael Joseph Cich

IPC分类号： H01L33/20 ,  H01L33/08 ,  H01L33/32 ,  H01L33/10 ,  H01L25/13 ,  H01L33/00 ,  H01L33/62 ,  H01L33/24 ,  H01L27/15 ,  H01L25/075

摘要： A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.