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公开(公告)号：US20190341525A1
公开(公告)日：2019-11-07
申请号：US16512735
申请日：2019-07-16
申请人： GLO AB
IPC分类号： H01L33/32 , H01L33/06 , H01L33/60 , H01L33/24 , H01L33/62 , H01L33/00 , H01L25/075 , H01L25/00 , H01L33/42
摘要： A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
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公开(公告)号：US10797202B2
公开(公告)日：2020-10-06
申请号：US16711852
申请日：2019-12-12
申请人： GLO AB
IPC分类号： H01L33/32 , H01L33/42 , H01L33/62 , H01L33/06 , H01L33/24 , H01L33/60 , H01L33/00 , H01L25/00 , H01L25/075
摘要： A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
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公开(公告)号：US10566499B2
公开(公告)日：2020-02-18
申请号：US16512735
申请日：2019-07-16
申请人： GLO AB
IPC分类号： H01L33/32 , H01L33/06 , H01L33/60 , H01L33/24 , H01L33/62 , H01L25/075 , H01L25/00 , H01L33/42 , H01L33/00
摘要： A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
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公开(公告)号：US09978808B2
公开(公告)日：2018-05-22
申请号：US15585420
申请日：2017-05-03
申请人： GLO AB
CPC分类号： H01L27/156 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/24 , H01L33/32 , H01L33/502
摘要： A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than the deposition area of any preceding active region, and by patterning the active region layers into different types of stacks. The active region layers may be formed as planar layers, or may be formed on semiconductor nanowires. The active region layers can emit light at the respective target wavelength range. Alternatively, at least one of green and red phosphor materials, dye materials, or quantum dots may be used instead of or in addition to the active regions that emit light at a wavelength different from a target wavelength of a respective LED.
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公开(公告)号：US10804436B2
公开(公告)日：2020-10-13
申请号：US16153062
申请日：2018-10-05
申请人： GLO AB
IPC分类号： H01L33/42 , H01L25/075 , H01L27/12 , H01L33/00 , H01L33/06 , H01L33/32 , H01L33/46 , H01L33/62 , H01L33/24 , H01L33/40
摘要： A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
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公开(公告)号：US11710805B2
公开(公告)日：2023-07-25
申请号：US17031143
申请日：2020-09-24
申请人： GLO AB
IPC分类号： H01L33/42 , H01L25/075 , H01L27/12 , H01L33/00 , H01L33/06 , H01L33/32 , H01L33/46 , H01L33/62 , H01L33/24 , H01L33/40
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/1214 , H01L33/007 , H01L33/0093 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/46 , H01L33/62 , H01L33/24 , H01L33/405 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
摘要： A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
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公开(公告)号：US11257983B2
公开(公告)日：2022-02-22
申请号：US16461256
申请日：2019-04-10
申请人： GLO AB
发明人： Richard P. Schneider, Jr. , Benjamin Leung , Fariba Danesh , Zulal Tezcan Ozel , Miao-Chan Tsai
IPC分类号： H01L33/24 , H01L27/15 , H01L33/36 , H01L33/46 , H01L33/62 , H01L25/075 , H01L33/00 , H01L33/12 , H01L33/32
摘要： A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.
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公开(公告)号：US10361341B2
公开(公告)日：2019-07-23
申请号：US15786766
申请日：2017-10-18
申请人： GLO AB
IPC分类号： H01L33/32 , H01L25/00 , H01L25/075 , H01L33/42 , H01L33/62 , H01L33/06 , H01L33/24 , H01L33/60 , H01L33/00
摘要： A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
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