公开(公告)号：US09299769B2

公开(公告)日：2016-03-29

申请号：US14151550

申请日：2014-01-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： John E. Barth, Jr. ,  Herbert L. Ho ,  Babar A. Khan ,  Kirk D. Peterson

IPC: H01L21/70 ,  H01L29/06 ,  H01L21/762

CPC classification number: H01L29/06 ,  H01L21/76254

Abstract: Semiconductor-on-oxide structures and related methods of forming such structures are disclosed. In one case, a method includes: forming a first dielectric layer over a substrate; forming a first conductive layer over the first dielectric layer, the first conductive layer including one of a metal or a silicide; forming a second dielectric layer over the first conductive layer; bonding a donor wafer to the second dielectric layer, the donor wafer including a donor dielectric and a semiconductor layer; cleaving the donor wafer to remove a portion of the donor semiconductor layer; forming at least one semiconductor isolation region from an unremoved portion of the donor semiconductor layer; and forming a contact to the first conductive layer through donor dielectric and the second dielectric layer.

Abstract translation: 公开了形成这种结构的半导体 - 氧化物结构和相关方法。 在一种情况下，一种方法包括：在衬底上形成第一介质层; 在所述第一介电层上形成第一导电层，所述第一导电层包括金属或硅化物之一; 在所述第一导电层上形成第二电介质层; 将施主晶片键合到第二介电层，施主晶片包括施主电介质和半导体层; 切割施主晶片以去除施主半导体层的一部分; 从所述施主半导体层的未移动部分形成至少一个半导体隔离区; 以及通过施主电介质和第二介电层形成与第一导电层的接触。