公开(公告)号：US09946152B2

公开(公告)日：2018-04-17

申请号：US15139994

申请日：2016-04-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhengqing John Qi ,  Christina A. Turley ,  Jed H. Rankin

IPC: G03F1/24 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/38

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to modified surfaces of extreme ultraviolet lithography photomasks and methods of manufacture. The structure includes a reflective surface having a patterned design, and a black border region at edges of the patterned design. The black border region includes a modified surface morphology to direct light away from reaching a subsequent mirror.

公开(公告)号：US20170315438A1

公开(公告)日：2017-11-02

申请号：US15139994

申请日：2016-04-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhengqing John Qi ,  Christina A. Turley ,  Jed H. Rankin

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/38

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to modified surfaces of extreme ultraviolet lithography photomasks and methods of manufacture. The structure includes a reflective surface having a patterned design, and a black border region at edges of the patterned design. The black border region includes a modified surface morphology to direct light away from reaching a subsequent mirror.