公开(公告)号：US20210091180A1

公开(公告)日：2021-03-25

申请号：US16784813

申请日：2020-02-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： John J. PEKARIK ,  Vibhor JAIN ,  Herbert HO ,  Claude ORTOLLAND ,  Qizhi LIU

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/737 ,  H01L29/165

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to virtual bulk in semiconductor on insulator technology and methods of manufacture. The structure includes a heterojunction bipolar transistor formed on a semiconductor on insulator (SOI) wafer with a doped sub-collector material in a buried insulator region under a semiconductor substrate of the SOI wafer.

公开(公告)号：US20210091189A1

公开(公告)日：2021-03-25

申请号：US16823005

申请日：2020-03-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qizhi LIU ,  Vibhor JAIN ,  Judson R. HOLT ,  Herbert HO ,  Claude ORTOLLAND ,  John J. PEKARIK

IPC: H01L29/417 ,  H01L29/08 ,  H01L29/737 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor and methods of manufacture. The structure includes: a sub-collector region; a collector region in electrical connection to the sub-collector region; an emitter located adjacent to the collector region and comprising emitter material, recessed sidewalls on the emitter material and an extension region extending at an upper portion of the emitter material above the recessed sidewalls; and an extrinsic base separated from the emitter by the recessed sidewalls.