公开(公告)号：US09461050B2

公开(公告)日：2016-10-04

申请号：US14098639

申请日：2013-12-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Byeong Y. Kim ,  Dan M. Mocuta

IPC: H01L27/108 ,  H01L29/78 ,  H01L29/66 ,  H01L21/308

CPC classification number: H01L27/10832 ,  H01L21/3086 ,  H01L27/10826 ,  H01L27/10858 ,  H01L27/10867 ,  H01L27/1087 ,  H01L27/10879 ,  H01L29/6656 ,  H01L29/785

Abstract: A self-aligned strap structure can be formed by forming trench capacitors and overlying trench top conductive material portions. End portions of fin mask structures overlie portions of the trench top conductive material portions. A dielectric spacer is formed around each end portions of the fin mask structure to cover additional areas of the trench top conductive material portions. An anisotropic etch is performed to recess portions of the trench top conductive material portions that are not covered by the fin mask structures or dielectric spacers. Conductive strap structures that are self-aligned to end portions of semiconductor fins are formed simultaneously with formation of the semiconductor fins. Access fin field effect transistors can be subsequently formed.

Abstract translation: 可以通过形成沟槽电容器和覆盖沟槽顶部导电材料部分来形成自对准带结构。 翅片掩模结构的端部覆盖在沟槽顶部导电材料部分的部分上。 围绕翅片掩模结构的每个端部形成介电隔离件以覆盖沟槽顶部导电材料部分的附加区域。 执行各向异性蚀刻以凹陷未被翅片掩模结构或电介质间隔物覆盖的沟槽顶部导电材料部分的部分。 与半导体翅片的端部自对准的导电带结构同时形成半导体翅片。 可以随后形成接入鳍场效应晶体管。