公开(公告)号：US20140361335A1

公开(公告)日：2014-12-11

申请号：US13914288

申请日：2013-06-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Stefan Flachowsky ,  Ralf Illgen ,  Gerd Zschaezsch

IPC: H01L27/092 ,  H01L21/8238

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203

Abstract: A device includes a substrate, a P-channel transistor and an N-channel transistor. The substrate includes a first layer of a first semiconductor material and a second layer of a second semiconductor material. The first and second semiconductor materials have different crystal lattice constants. The P-channel transistor includes a channel region having a compressive stress in a first portion of the substrate. The channel region of the P-channel transistor includes a portion of the first layer of the first semiconductor material and a portion of the second layer of the second semiconductor material. The N-channel transistor includes a channel region having a tensile stress formed in a second portion of the substrate. The channel region of the N-channel transistor includes a portion of the first layer of the first semiconductor material and a portion of the second layer of the second semiconductor material. Methods of forming the device are also disclosed.

Abstract translation: 一种器件包括衬底，P沟道晶体管和N沟道晶体管。 衬底包括第一半导体材料的第一层和第二半导体材料的第二层。 第一和第二半导体材料具有不同的晶格常数。 P沟道晶体管包括在衬底的第一部分中具有压应力的沟道区。 P沟道晶体管的沟道区域包括第一半导体材料的第一层的一部分和第二半导体材料的第二层的一部分。 N沟道晶体管包括在衬底的第二部分中形成的具有拉伸应力的沟道区。 N沟道晶体管的沟道区域包括第一半导体材料的第一层的一部分和第二半导体材料的第二层的一部分。 还公开了形成装置的方法。

公开(公告)号：US09269714B2

公开(公告)日：2016-02-23

申请号：US13914288

申请日：2013-06-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Stefan Flachowsky ,  Ralf Illgen ,  Gerd Zschaezsch

IPC: H01L21/84 ,  H01L27/092 ,  H01L21/8238 ,  H01L27/12

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203

Abstract: A device includes a substrate, a P-channel transistor and an N-channel transistor. The substrate includes a first layer of a first semiconductor material and a second layer of a second semiconductor material. The first and second semiconductor materials have different crystal lattice constants. The P-channel transistor includes a channel region having a compressive stress in a first portion of the substrate. The channel region of the P-channel transistor includes a portion of the first layer of the first semiconductor material and a portion of the second layer of the second semiconductor material. The N-channel transistor includes a channel region having a tensile stress formed in a second portion of the substrate. The channel region of the N-channel transistor includes a portion of the first layer of the first semiconductor material and a portion of the second layer of the second semiconductor material. Methods of forming the device are also disclosed.

Abstract translation: 一种器件包括衬底，P沟道晶体管和N沟道晶体管。 衬底包括第一半导体材料的第一层和第二半导体材料的第二层。 第一和第二半导体材料具有不同的晶格常数。 P沟道晶体管包括在衬底的第一部分中具有压应力的沟道区。 P沟道晶体管的沟道区域包括第一半导体材料的第一层的一部分和第二半导体材料的第二层的一部分。 N沟道晶体管包括在衬底的第二部分中形成的具有拉伸应力的沟道区。 N沟道晶体管的沟道区域包括第一半导体材料的第一层的一部分和第二半导体材料的第二层的一部分。 还公开了形成装置的方法。