Sublithographic Kelvin structure patterned with DSA
    2.
    发明授权
    Sublithographic Kelvin structure patterned with DSA 有权
    用DSA构图的亚光刻开尔文结构

    公开(公告)号:US09385026B2

    公开(公告)日:2016-07-05

    申请号:US14272691

    申请日:2014-05-08

    Abstract: In one aspect, a DSA-based method for forming a Kelvin-testable structure includes the following steps. A guide pattern is formed on a substrate which defines i) multiple pad regions of the Kelvin-testable structure and ii) a region interconnecting two of the pad regions on the substrate. A self-assembly material is deposited onto the substrate and is annealed at a temperature/duration sufficient to cause it to undergo self-assembly to form a self-assembled pattern on the substrate, wherein the self-assembly is directed by the guide pattern such that the self-assembled material in the region interconnecting the two pad regions forms multiple straight lines. A pattern of the self-assembled material is transferred to the substrate forming multiple lines in the substrate, wherein the pattern of the self-assembled material is configured such that only a given one of the lines is a continuous line between the two pad regions on the substrate.

    Abstract translation: 一方面,用于形成开尔文可测试结构的基于DSA的方法包括以下步骤。 引导图案形成在衬底上,其限定i)开尔文可测试结构的多个焊盘区域,以及ii)将衬底上的两个衬垫区域互连的区域。 自组装材料沉积在衬底上,并在足以使其经历自组装以在衬底上形成自组装图案的温度/持续时间退火,其中自组装由引导图案引导 互连两个焊盘区域的区域中的自组装材料形成多个直线。 自组装材料的图案被转移到在衬底中形成多条线的衬底,其中自组装材料的图案被配置为使得只有给定的一条线是两个焊盘区域之间的连续线 底物。

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