公开(公告)号：US20210013109A1

公开(公告)日：2021-01-14

申请号：US16508815

申请日：2019-07-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Bharat V. KRISHNAN ,  Rinus Tek Po LEE ,  Jiehui SHU ,  Hyung Yoon CHOI

IPC: H01L21/8238 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/49 ,  H01L21/67

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to multiple threshold voltage devices and methods of manufacture. The structure includes: a gate dielectric material; a gate material on the gate dielectric material, the gate material comprising different thickness in different regions each of which are structured for devices having a different Vt; and a workfunction material on the gate material.