公开(公告)号：US20160056261A1

公开(公告)日：2016-02-25

申请号：US14466004

申请日：2014-08-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hans-Juergen Thees ,  Jens-Peter Biethan

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/51 ,  H01L21/311 ,  H01L29/78 ,  H01L21/306 ,  H01L29/423

CPC classification number: H01L29/6656 ,  H01L21/30608 ,  H01L21/3086 ,  H01L29/0847 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: A method of forming a semiconductor device is disclosed wherein sigma-shaped cavities are formed in alignment with a gate structure such that a cavity tip of the sigma-shaped cavities has a small lateral distance to the channel region, while a lateral distance from the silicon-germanium material filled into the cavity and extending along the sidewall of the gate structure above the active region is at least maintained, if not increased. A semiconductor device is formed wherein the semiconductor device comprises a gate structure disposed over an active region of a semiconductor substrate. The gate structure has a gate electrode and a sidewall spacer structure with a first spacer of L-shape and a second spacer disposed on the first spacer. In alignment with the gate structure, sigma-shaped cavities are formed in the active region and embedded SiGe material is epitaxially grown in the sigma-shaped cavities.

Abstract translation: 公开了一种形成半导体器件的方法，其中形成与栅极结构对准的σ形空腔，使得σ形空腔的空腔顶端具有与沟道区域的小的横向距离，而与硅的横向距离 如果不增加，填充到空腔中并且沿着活动区域上方的栅极结构的侧壁延伸的锗材料至少被维持。 形成半导体器件，其中半导体器件包括设置在半导体衬底的有源区上的栅极结构。 栅极结构具有栅电极和侧壁间隔结构，其具有L形的第一间隔件和设置在第一间隔件上的第二间隔件。 与栅极结构对准，在活性区域中形成σ形空腔，并且在σ形空腔中外延生长嵌入的SiGe材料。