公开(公告)号：US09437496B1

公开(公告)日：2016-09-06

申请号：US14727219

申请日：2015-06-01

申请人： GLOBALFOUNDRIES INC.

发明人： Michael P. Chudzik ,  Brian J. Greene ,  Edward P. Maciejewski ,  Kevin McStay ,  Shreesh Narasimha ,  Chengwen Pei ,  Werner A. Rausch

IPC分类号： H01L29/10 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/02

CPC分类号： H01L29/66795 ,  H01L29/66545

摘要： A semiconductor device such as a FinFET includes a plurality of fins formed upon a substrate and a gate covering a portion of the fins. Diamond-shaped volumes are formed on the sidewalls of the fins by epitaxial growth which may be limited to avoid merging of the volumes or where the epitaxy volumes have merged. Because of the difficulties in managing merging of the diamond-shaped volumes, a controlled merger of the diamond-shaped volumes includes depositing an amorphous semiconductor material upon the diamond-shaped volumes and a crystallization process to crystallize the deposited semiconductor material on the diamond-shaped volumes to fabricate controllable and uniformly merged source drain.

摘要翻译： 诸如FinFET的半导体器件包括形成在衬底上的多个鳍片和覆盖鳍片的一部分的栅极。 通过外延生长在翅片的侧壁上形成菱形体积，其可以被限制以避免体积的合并或外延体积合并的位置。 由于难以管理菱形体积的合并，钻石形容积的受控合并包括在金刚石体积上沉积非晶半导体材料和结晶过程以将沉积的半导体材料结晶在菱形体上 体积来制造可控和均匀合并的源极漏极。