公开(公告)号：US09397203B2

公开(公告)日：2016-07-19

申请号：US14677460

申请日：2015-04-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： John Z. Colt, Jr. ,  John J. Ellis-Monaghan ,  Leah M. Pastel ,  Steven M. Shank

IPC: H01L29/66 ,  H01L29/737 ,  H01L29/735 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/73

CPC classification number: H01L29/737 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/66242 ,  H01L29/6625 ,  H01L29/66265 ,  H01L29/7317 ,  H01L29/735

Abstract: Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first terminal of the bipolar junction transistor is formed from a section of a device layer of a semiconductor-on-insulator wafer. An intrinsic base of the bipolar junction transistor is formed from an epitaxially-grown section of a first semiconductor layer, which is coextensive with a sidewall of the section of the device layer. A second terminal of the bipolar junction transistor is formed from a second semiconductor layer that is coextensive with the epitaxially-grown section of the first semiconductor layer. The epitaxially-grown section of a first semiconductor layer defines a first junction with the section of the device layer, and the second semiconductor layer defines a second junction with the epitaxially-grown section of the first semiconductor layer.