公开(公告)号：US10228685B2

公开(公告)日：2019-03-12

申请号：US14920376

申请日：2015-10-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： John Z. Colt, Jr. ,  Venkata N. Pavuluri

IPC: G05B19/41 ,  G05B19/418

Abstract: A computer-implemented method, system, and/or computer program product controls manufacturing devices in a manufacturing environment. One or more processors receive sensor readings, which detect conditions that are unique to different areas within the manufacturing environment, in order to generate models of operations for each area in the manufacturing environment. One or more processors generate an ensemble model by extracting information from the models to describe a relationship between the conditions. One or more processors generate a device control signal, based on the ensemble model, that adjusts operations in the different areas in order to ameliorate the detected conditions.

公开(公告)号：US09397203B2

公开(公告)日：2016-07-19

申请号：US14677460

申请日：2015-04-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： John Z. Colt, Jr. ,  John J. Ellis-Monaghan ,  Leah M. Pastel ,  Steven M. Shank

IPC: H01L29/66 ,  H01L29/737 ,  H01L29/735 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/73

CPC classification number: H01L29/737 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/66242 ,  H01L29/6625 ,  H01L29/66265 ,  H01L29/7317 ,  H01L29/735

Abstract: Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first terminal of the bipolar junction transistor is formed from a section of a device layer of a semiconductor-on-insulator wafer. An intrinsic base of the bipolar junction transistor is formed from an epitaxially-grown section of a first semiconductor layer, which is coextensive with a sidewall of the section of the device layer. A second terminal of the bipolar junction transistor is formed from a second semiconductor layer that is coextensive with the epitaxially-grown section of the first semiconductor layer. The epitaxially-grown section of a first semiconductor layer defines a first junction with the section of the device layer, and the second semiconductor layer defines a second junction with the epitaxially-grown section of the first semiconductor layer.