公开(公告)号：US20190113836A1

公开(公告)日：2019-04-18

申请号：US15784408

申请日：2017-10-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei SUN ,  Obert R. WOOD, II ,  Genevieve BEIQUE ,  Yulu CHEN ,  Erik VERDUIJN ,  Francis GOODWIN

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/58 ,  G03F1/80

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.