公开(公告)号：US20180144976A1

公开(公告)日：2018-05-24

申请号：US15360255

申请日：2016-11-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shao Beng LAW ,  Xunyuan ZHANG ,  Frank W. MONT ,  Genevieve BEIQUE ,  Lei SUN

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L21/027 ,  H01L23/528 ,  H01L21/3205 ,  H01L21/285

CPC classification number: H01L21/76816 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76877 ,  H01L23/5283

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to post spacer self-aligned cut structures and methods of manufacture. The method includes: providing a non-mandrel cut; providing a mandrel cut; forming blocking material on underlying conductive material in the non-mandrel cut and the mandrel cut; forming trenches with the blocking material acting as a blocking mask at the mandrel cut and the non-mandrel cut; and filling the trenches with metallization features such that the metallization features have a tip to tip alignment.

公开(公告)号：US20190113836A1

公开(公告)日：2019-04-18

申请号：US15784408

申请日：2017-10-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei SUN ,  Obert R. WOOD, II ,  Genevieve BEIQUE ,  Yulu CHEN ,  Erik VERDUIJN ,  Francis GOODWIN

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/58 ,  G03F1/80

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.