公开(公告)号：US09886998B2

公开(公告)日：2018-02-06

申请号：US15175466

申请日：2016-06-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Igor Arsovski ,  Qing Li ,  Wei Zhao ,  Xiaoli Hu

IPC: G11C11/419

CPC classification number: G11C11/419 ,  G11C7/067

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to sensing circuit for a memory and methods of use. The memory includes a self-referenced sense amp that is structured to calibrate its individual pre-charge based on a trip-point, with autonomous pre-charge activation circuitry that starts pre-charging a sense-line on each unique entry as soon as a sense has been performed or completed.

公开(公告)号：US10446233B2

公开(公告)日：2019-10-15

申请号：US15684492

申请日：2017-08-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Igor Arsovski ,  Qing Li ,  Xiaoli Hu ,  Wei Zhao ,  Jieyao Liu

IPC: G11C15/04 ,  G11C11/419 ,  G11C7/06 ,  G11C7/12

Abstract: The present disclosure relates to a structure which includes a self-referenced multiplexer circuit which is configured to pre-charge a plurality of sense lines to a voltage threshold in a first time period and sense and detect a value of a selected sense line of the sense lines in a second time period.