公开(公告)号：US10109492B2

公开(公告)日：2018-10-23

申请号：US13775416

申请日：2013-02-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Gabriela Dilliway ,  Dina Triyoso ,  Elke Erben ,  Rimoon Agaiby

IPC: H01L21/28 ,  H01L21/8238 ,  H01L21/02 ,  H01L29/66

Abstract: One illustrative method disclosed herein includes performing an atomic layer deposition (ALD) process at a temperature of less than 400° C. to deposit a layer of silicon dioxide on a germanium-containing region of semiconductor material and forming a gate structure of a transistor device above the layer of silicon dioxide.

公开(公告)号：US20140242788A1

公开(公告)日：2014-08-28

申请号：US13775416

申请日：2013-02-25

Applicant: GLOBALFOUNDRIES INC.

Inventor： Gabriela Dilliway ,  Dina Triyoso ,  Elke Erben ,  Rimoon Agaiby

IPC: H01L21/28

CPC classification number: H01L21/28255 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/823807 ,  H01L21/823821 ,  H01L29/66651

Abstract: One illustrative method disclosed herein includes performing an atomic layer deposition (ALD) process at a temperature of less than 400° C. to deposit a layer of silicon dioxide on a germanium-containing region of semiconductor material and forming a gate structure of a transistor device above the layer of silicon dioxide.

Abstract translation: 本文公开的一种说明性方法包括在小于400℃的温度下进行原子层沉积（ALD）工艺，以在半导体材料的含锗区域上沉积二氧化硅层并形成晶体管器件的栅极结构 在二氧化硅层之上。