公开(公告)号：US10074571B1

公开(公告)日：2018-09-11

申请号：US15451869

申请日：2017-03-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brian J. Greene ,  Shreesh Narasimha ,  Scott R. Stiffler

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/762 ,  H01L27/088 ,  H01L29/66

Abstract: A fin cut process cuts semiconductor fins after forming sacrificial gate structures that overlie portions of the fins. Selected gate structures are removed to form openings and exposed portions of the fins within the openings are etched. An isolation dielectric layer is deposited into the openings and between end portions of the cut fins. The process enables a single sacrificial gate structure to define the spacing between two active regions on dissimilar electrical nets.

公开(公告)号：US20170170016A1

公开(公告)日：2017-06-15

申请号：US14967755

申请日：2015-12-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Woo-Hyeong Lee ,  Jujin An ,  Shahrukh A. Khan ,  Rosa A. Orozco-Teran ,  Oluwafemi O. Ogunsola ,  William K. Henson ,  Scott R. Stiffler

IPC: H01L21/033 ,  H01L21/8238 ,  H01L21/027

CPC classification number: H01L21/823871 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/743 ,  H01L21/76816 ,  H01L21/76898 ,  H01L23/485

Abstract: Methods for multiple patterning a substrate may include: forming a hard mask including a carbonaceous layer and an oxynitride layer over the carbonaceous layer on a substrate; and forming a first pattern into the oxynitride layer and partially into the carbonaceous layer using a first soft mask positioned over the hard mask. A wet etching removes a portion of the first soft mask from the first pattern in the oxynitride layer without damaging the carbonaceous layer. Subsequently, a second pattern and a third pattern are formed into the hard mask, creating a multiple pattern in the hard mask. The multiple pattern may be etched into the substrate, followed by removing any remaining portion of the hard mask.