公开(公告)号：US20170338226A1

公开(公告)日：2017-11-23

申请号：US15628984

申请日：2017-06-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Haigou Huang ,  Jinping Liu ,  Huang Liu ,  Taifong Chao

IPC: H01L27/088 ,  H01L21/3105 ,  H01L21/3115 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/28518 ,  H01L21/31053 ,  H01L21/31155 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/66803 ,  H01L29/7856

Abstract: Various embodiments include methods and integrated circuit structures. In some cases, an integrated circuit (IC) structure includes: a substrate; a set of fin structures overlying the substrate, the set of fin structures including a substrate base and a silicide layer over the substrate base; an oxide layer located between adjacent fins in the set of fin structures; and a nitride layer over the set of fin structures, wherein a height of the nitride layer is substantially uniform across the set of fin structures.

公开(公告)号：US09754837B1

公开(公告)日：2017-09-05

申请号：US15160409

申请日：2016-05-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Haigou Huang ,  Jinping Liu ,  Huang Liu ,  Taifong Chao

IPC: H01L29/15 ,  H01L21/8234 ,  H01L21/3105 ,  H01L21/3115 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092

CPC classification number: H01L27/0886 ,  H01L21/28518 ,  H01L21/31053 ,  H01L21/31155 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L29/7856

Abstract: Various embodiments include methods and integrated circuit structures. In some cases, a method of forming an integrated circuit structure can include: forming a mask over an oxide layer and an underlying set of fin structures, the set of fin structures including a plurality of fins each having a substrate base and a silicide layer over the substrate base; implanting the oxide layer through an opening in the mask; removing the mask; polishing the oxide layer overlying the set of fin structures after removing the mask to expose the set of fin structures; and forming a nitride layer over the set of fin structures.