公开(公告)号：US20200119002A1

公开(公告)日：2020-04-16

申请号：US16162373

申请日：2018-10-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： RUILONG XIE ,  WILLIAM TAYLOR ,  HUI ZANG

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

Abstract: The present disclosure relates to integrated circuit (IC) structures and their method of manufacture. More particularly, the present disclosure relates to forming a semiconductor device having generally fork-shaped contacts around epitaxial regions to increase surface contact area and improve device performance. The integrated circuit (IC) structure of the present disclosure comprises a plurality of fins disposed on a semiconductor substrate, at least one epitaxial region laterally disposed on selected fins, and a contact material positioned over and surrounding the epitaxial region.