公开(公告)号：US09337338B2

公开(公告)日：2016-05-10

申请号：US14820938

申请日：2015-08-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brian J. Greene ,  Yue Liang ,  Xiaojun Yu

IPC: H01L21/338 ,  H01L29/78 ,  H01L21/28 ,  H01L29/66 ,  H01L29/165 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L29/7848 ,  H01L21/02112 ,  H01L21/02532 ,  H01L21/28123 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66568 ,  H01L29/66636

Abstract: In one embodiment, a semiconductor device is provided that includes a semiconductor substrate including an active region and at least one trench isolation region at a perimeter of the active region, and a functional gate structure present on a portion of the active region of the semiconductor substrate. Embedded semiconductor regions are present in the active region of the semiconductor substrate on opposing sides of the portion of the active region that the functional gate structure is present on. A portion of the active region of the semiconductor substrate separates the outermost edge of the embedded semiconductor regions from the at least one isolation region. Methods of forming the aforementioned device are also provided.