公开(公告)号：US10106892B1

公开(公告)日：2018-10-23

申请号：US15692816

申请日：2017-08-31

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shahab Siddiqui ,  Abu Naser Zainuddin ,  Beth Baumert ,  Suresh Uppal

IPC: H01L21/02 ,  H01L21/306 ,  C23C16/455 ,  C01B33/149 ,  C01B21/06 ,  C01F7/02 ,  C01F17/00

Abstract: Methods of forming conformal low temperature gate oxides on a HV I/O and a core logic and the resulting devices are provided. Embodiments include providing a HV I/O and core logic laterally separated on a Si substrate, each having a fin; forming a gate oxide layer over each fin and the Si substrate; forming a silicon oxy-nitride layer over the gate oxide layer; forming a sacrificial oxide layer over the silicon oxy-nitride layer; removing the sacrificial oxide and silicon oxy-nitride layers and thinning the gate oxide layer; forming a second gate oxide layer over the thinned gate oxide layer; forming a silicon oxy-nitride layer over the second gate oxide layer; removing the silicon oxy-nitride and second gate oxide layers over the core logic fin portion; forming an IL over the core logic fin portion; and forming a HfOx layer over the second silicon oxy-nitride layer and ILs.