METHODS FOR FABRICATING INTEGRATED CIRCUITS THAT INCLUDE A SEALED SIDEWALL IN A POROUS LOW-K DIELECTRIC LAYER
    1.
    发明申请
    METHODS FOR FABRICATING INTEGRATED CIRCUITS THAT INCLUDE A SEALED SIDEWALL IN A POROUS LOW-K DIELECTRIC LAYER 审中-公开
    在多孔低介电层包括密封小屋的集成电路的制作方法

    公开(公告)号:US20140273463A1

    公开(公告)日:2014-09-18

    申请号:US13841855

    申请日:2013-03-15

    Abstract: Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a sidewall in a porous low-k dielectric layer that overlies a semiconductor substrate using a plurality of discontinuous etching treatments. Exposed portions of the sidewall are progressively sealed interposingly between the discontinuous etching treatments to form a sealed sidewall. The sealed sidewall defines a trench in the porous low-k dielectric layer.

    Abstract translation: 提供了制造集成电路的方法。 在一个示例中,制造集成电路的方法包括在多个低k电介质层中形成侧壁,所述多孔低k电介质层使用多次不连续蚀刻处理覆盖在半导体衬底上。 侧壁的暴露部分逐渐密封在不连续的蚀刻处理之间以形成密封的侧壁。 密封的侧壁在多孔低k电介质层中限定沟槽。

    DETECTION OF PARTICLE CONTAMINATION ON WAFERS
    2.
    发明申请
    DETECTION OF PARTICLE CONTAMINATION ON WAFERS 有权
    检测颗粒污染在水中

    公开(公告)号:US20150115153A1

    公开(公告)日:2015-04-30

    申请号:US14063531

    申请日:2013-10-25

    CPC classification number: G01N21/9501 G01N21/94 G01N23/00

    Abstract: A method of the detection of particle contamination on a semiconductor wafer is provides which includes examining an area of the semiconductor wafer by a metrology system comprising a scatterometry or ellipsometry/reflectometry tool to obtain measured metrology data, comparing the measured metrology data with reference metrology data and determining the presence of particle contamination in the examined area of the semiconductor wafer based on the comparison of the measured metrology data with the reference metrology data.

    Abstract translation: 提供了一种检测半导体晶片上的颗粒污染的方法,其包括通过包括散射仪或椭偏仪/反射测量工具的测量系统检查半导体晶片的面积,以获得测量的测量数据,将测量的测量数据与参考测量数据进行比较 并且基于测量的测量数据与参考测量数据的比较来确定半导体晶片的检查区域中颗粒污染的存在。

    Detection of particle contamination on wafers
    3.
    发明授权
    Detection of particle contamination on wafers 有权
    检测晶圆上的颗粒污染

    公开(公告)号:US09091667B2

    公开(公告)日:2015-07-28

    申请号:US14063531

    申请日:2013-10-25

    CPC classification number: G01N21/9501 G01N21/94 G01N23/00

    Abstract: A method of the detection of particle contamination on a semiconductor wafer is provides which includes examining an area of the semiconductor wafer by a metrology system comprising a scatterometry or ellipsometry/reflectometry tool to obtain measured metrology data, comparing the measured metrology data with reference metrology data and determining the presence of particle contamination in the examined area of the semiconductor wafer based on the comparison of the measured metrology data with the reference metrology data.

    Abstract translation: 提供了一种检测半导体晶片上的颗粒污染的方法,其包括通过包括散射仪或椭偏仪/反射测量工具的测量系统检查半导体晶片的面积,以获得测量的测量数据,将测量的测量数据与参考测量数据进行比较 并且基于测量的测量数据与参考测量数据的比较来确定半导体晶片的检查区域中颗粒污染的存在。

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