Abstract:
Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a sidewall in a porous low-k dielectric layer that overlies a semiconductor substrate using a plurality of discontinuous etching treatments. Exposed portions of the sidewall are progressively sealed interposingly between the discontinuous etching treatments to form a sealed sidewall. The sealed sidewall defines a trench in the porous low-k dielectric layer.
Abstract:
A method of the detection of particle contamination on a semiconductor wafer is provides which includes examining an area of the semiconductor wafer by a metrology system comprising a scatterometry or ellipsometry/reflectometry tool to obtain measured metrology data, comparing the measured metrology data with reference metrology data and determining the presence of particle contamination in the examined area of the semiconductor wafer based on the comparison of the measured metrology data with the reference metrology data.
Abstract:
A method of the detection of particle contamination on a semiconductor wafer is provides which includes examining an area of the semiconductor wafer by a metrology system comprising a scatterometry or ellipsometry/reflectometry tool to obtain measured metrology data, comparing the measured metrology data with reference metrology data and determining the presence of particle contamination in the examined area of the semiconductor wafer based on the comparison of the measured metrology data with the reference metrology data.