公开(公告)号：US20150194342A1

公开(公告)日：2015-07-09

申请号：US14150260

申请日：2014-01-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Huy CAO ,  Songkram SRIVATHANAKUL ,  Huang LIU ,  Garo Jacques DERDERIAN ,  Boaz ALPERSON

IPC: H01L21/768 ,  H01L23/482

CPC classification number: H01L23/5329 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76831 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conductive contact structure of a circuit structures and methods of fabrication thereof are provided. The fabrication includes, for instance, providing at least one contact opening disposed over a semiconductor substrate; forming a carbon-rich contact liner material including a carbon-containing species and an elemental carbon disposed therein, the carbon-containing species and the elemental carbon together defining a set carbon content within the carbon-rich contact liner material; and depositing the carbon-rich contact liner material conformally within the at least one contact opening disposed over the semiconductor substrate.

Abstract translation: 提供电路结构的导电接触结构及其制造方法。 该制造包括例如提供设置在半导体衬底上的至少一个接触开口; 形成包含含碳物质和设置在其中的元素碳的富碳接触衬垫材料，所述含碳物质和所述元素碳一起限定所述富碳接触衬里材料内的固定碳含量; 以及将所述富碳接触衬垫材料共形地沉积在设置在所述半导体衬底上的所述至少一个接触开口内。

公开(公告)号：US20150357285A1

公开(公告)日：2015-12-10

申请号：US14799116

申请日：2015-07-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Huy CAO ,  Songkram SRIVATHANAKUL ,  Huang LIU ,  Garo Jacques DERDERIAN ,  Boaz ALPERSON

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76831 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conductive contact structure of a circuit structures and methods of fabrication thereof are provided. The fabrication includes, for instance, providing at least one contact opening disposed over a semiconductor substrate; forming a carbon-rich contact liner material having a set carbon content conformally within the at least one contact opening disposed over the semiconductor substrate.

Abstract translation: 提供电路结构的导电接触结构及其制造方法。 该制造包括例如提供设置在半导体衬底上的至少一个接触开口; 在所述半导体衬底上设置的所述至少一个接触开口中形成具有固定碳含量的富碳接触衬垫材料。