公开(公告)号：US20180269273A1

公开(公告)日：2018-09-20

申请号：US15463011

申请日：2017-03-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sunil Singh ,  Devender ,  Lili Cheng

IPC: H01L49/02

CPC classification number: H01L28/60

Abstract: Methods for contacting a metal-insulator-metal (MIM) capacitor, as well as structures including a MIM capacitor. A dielectric layer is formed on an electrode of a metal-insulator-metal capacitor. A via is formed that extends vertically through the dielectric layer to the electrode. A conductive plug is formed in the via that contacts the electrode. The dielectric layer is comprised of a polymer, such as polyimide.

公开(公告)号：US10109706B1

公开(公告)日：2018-10-23

申请号：US15643721

申请日：2017-07-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Devender ,  Sunil K. Singh ,  M. Golam Faruk ,  Dewei Xu

IPC: H01L21/31 ,  H01L49/02 ,  H01L21/311 ,  H01L21/027 ,  H01L21/283 ,  H01L21/3105 ,  H01L27/12

Abstract: The present disclosure describes a method or forming vertical natural capacitor (VNCAP) and the resulting device. The method includes applying a patterned mask over an insulation layer. The method includes forming using the patterned mask, a dielectric trench in the insulation layer. The method includes depositing a high dielectric constant k (high k) layer in the dielectric trench. The method includes forming a first trench and a second trench in the high k dielectric layer. The high k dielectric layer is disposed between the first trench and the second trench. The method includes depositing metal in the first trench and the second trench.