公开(公告)号：US20170301551A1

公开(公告)日：2017-10-19

申请号：US15099641

申请日：2016-04-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Donghun KANG ,  Balaji KANNAN ,  Jinping LIU

IPC: H01L21/308 ,  H01L21/3065 ,  H01L21/306 ,  H01L27/092 ,  H01L21/285

CPC classification number: H01L21/3085 ,  H01L21/28556 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/092

Abstract: A method of fabricating multi Vth devices and the resulting device are disclosed. Embodiments include forming a high-k dielectric layer over a substrate; forming a first TiN layer, a first barrier layer, a second TiN layer, a second barrier layer, and a third TiN layer consecutively over the high-k dielectric layer; forming a first masking layer over the third TiN layer in a first region; removing the third TiN layer in second and third regions, exposing the second barrier layer in the second and third regions; removing the first masking layer; removing the exposed second barrier layer; forming a second masking layer over the third TiN layer in the first region and the second TiN layer in the second regions; removing the second TiN layer in the third region, exposing the first barrier layer in the third region; removing the second masking layer; and removing the exposed first barrier layer.